| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,962 pcs
|
9962 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Industrial Grade | |
| Input Type | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Storage Temperature | |
| Supplier Device Package | |
| Switching Energy | |
| Tape & Reel | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The FGA60N60UFDTU is a single Insulated Gate Bipolar Transistor (IGBT) from ON Semiconductor. It employs Field Stop technology for improved switching performance and efficiency. The device is rated for a maximum collector-emitter voltage of 600V and a maximum collector current of 120A, with a maximum power dissipation of 298W.
Key electrical characteristics include a typical gate charge of 188 nC and typical switching energies of 1.81 mJ (turn-on) and 810 µJ (turn-off) under test conditions of 400V, 60A, 5 Ohm gate resistance, and 15V gate voltage. The collector-emitter saturation voltage is typically 2.4V maximum at 15V gate voltage and 60A current. The device features a standard gate input type.
The FGA60N60UFDTU is housed in a TO-3P-3 / SC-65-3 package with a supplier device package of TO-3PN. It is designed for through-hole mounting. The operating junction temperature range spans from -55°C to 150°C.
600V
120A
TO-3P-3, SC-65-3; supplier package TO-3PN
-55°C to 150°C (junction)
Field Stop
188 nC
Yes, RoHS3 compliant (unverified).