| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,005 pcs
|
2005 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FGA40N65SMD is a 650V, 80A Field Stop IGBT from onsemi designed for applications requiring low conduction and switching losses. It utilizes onsemi's field stop 2nd generation IGBT technology, offering a typical saturation voltage of 1.9V at 40A and a maximum junction temperature of 175°C. The device includes a co-packaged diode with a typical forward voltage of 2.1V at 20A and a reverse recovery time of 42ns.
This IGBT is suitable for solar inverters, UPS systems, welders, induction heating, telecom, and ESS applications. It features positive temperature coefficient for easy parallel operation and high current capability. The device is housed in a TO-3P-3 through-hole package and is Pb-free and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $5.45 | $5.45 |
| 30+ | $3.07 | $3.07 |
| 120+ | $2.54 | $2.54 |
| 510+ | $2.16 | $2.16 |
| 1,020+ | $2.05 | $2.05 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
80A.
TO-3P-3 (through-hole).
-55°C to 175°C.
Yes, it is RoHS3 compliant and Pb-free.
1.9V at IC=40A, VGE=15V.
820µJ at 400V, 40A, 6Ohm, 15V.