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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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28 pcs
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28 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The FGA30S120P is a Trench Field Stop IGBT manufactured by ON Semiconductor. It is rated for a collector-emitter voltage of 1300V and a continuous collector current of 60A, with a maximum power dissipation of 348W. The device features a low Vce(on) saturation voltage of 2.3V at 15V gate drive and 30A collector current, and a typical gate charge of 78 nC.
This IGBT is housed in a TO-3P-3 / SC-65-3 (TO-3PN) through-hole package suitable for robust power applications. It operates over a junction temperature range of -55°C to 175°C, making it suitable for demanding thermal environments. The device uses standard gate drive input.
Designed for high-voltage switching applications, the FGA30S120P offers efficient conduction and reliable performance in power conversion circuits.
1300 V.
60 A.
TO-3P-3, SC-65-3 (also known as TO-3PN).
-55°C to 175°C.
2.3 V maximum at Vge=15V, Ic=30A.
Yes, it is marked as RoHS3 compliant, though this is unverified.
348 W.