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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,350 pcs
|
1350 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Turn-Off Delay Time | |
| Turn-Off Switching Energy | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The FGA30N65SMD is a 650V, 60A Field Stop IGBT (Insulated Gate Bipolar Transistor) manufactured by ON Semiconductor. This device is designed for high-efficiency power switching applications, offering a low saturation voltage of 2.5V (max) at 15V gate drive and 30A collector current. The Field Stop technology provides improved switching performance and ruggedness.
Key electrical specifications include a maximum power dissipation of 300W, operating junction temperature range from -55°C to 175°C, and a typical gate charge of 87nC. Switching characteristics are optimized for fast operation, with typical turn-on delay of 14ns and turn-off delay of 102ns, and switching energies of 716µJ (on) and 208µJ (off) under test conditions of 400V, 30A, and 6Ω gate resistance.
The device is packaged in a through-hole TO-3P-3 / SC-65-3 package, with the supplier device package being TO-3PN. This package offers excellent thermal performance for high-power applications. The FGA30N65SMD also includes an anti-parallel diode with a typical reverse recovery time of 35ns, making it suitable for applications requiring integrated freewheeling diode.
| Qty | Low | High |
|---|---|---|
| 450+ | $1.33 | $1.33 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage (Vces) is 650V.
The maximum collector current (Ic) is 60A.
The operating junction temperature range is -55°C to 175°C.
It is available in a through-hole TO-3P-3, SC-65-3 package, with the supplier device package being TO-3PN.
The part is listed as RoHS3 Compliant, but this status is unverified.
The typical gate charge is 87nC.
Typical turn-on delay is 14ns and turn-off delay is 102ns under test conditions of 400V, 30A, 6Ohm, 15V.