FGA25N120ANTDTU-F109 FGA25N120ANTDTU-F109 is a 1200V, 50A NPT Trench IGBT from onsemi. It features low saturation voltage and low switching loss, packaged in a TO-3P through-hole package.
Mfr Part #:

FGA25N120ANTDTU-F109

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FGA25N120ANTDTU-F109 is a 1200V, 50A NPT Trench IGBT from onsemi. It features low saturation voltage and low switching loss, packaged in a TO-3P through-hole package.
Total Stock: 1,540 pcs

FGA25N120ANTDTU-F109 Available from 1 distributor

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FGA25N120ANTDTU-F109 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Current Continuous (Nominal @ Tc=100 °C)
Collector Cut-Off Current (ICES)
Collector Emitter Saturation Voltage (Typical @ Ic=25 A, Tc=25 °C)
Current
Diode Forward Current (Maximum @ TC=100 °C)
Diode Forward Current (Maximum @ TC=25 °C)
Diode Maximum Forward Current (Pulsed)
Gate Charge
Gate Threshold Voltage (Vge(th))
Gate-Emitter Leakage Current (IGES)
Gate-Emitter Voltage
Halogen Free
IGBT Type
Input Type
Lead Style
Mounting Type
Operating Temperature
Packaging Method
Power
Power Dissipation (Maximum @ TC=100 °C)
Pulsed Collector Current
Reverse Recovery Time (trr)
Standard Package Quantity
Storage Temperature
Storage Temperature Range
Supplier Device Package
Switching Energy
Switching Energy (off)
Td (on
Test Condition
Thermal Resistance Junction To Case (Nominal)
Thermal Resistance Junction-to-Ambient
Turn-Off Delay Time (td(off))
Vce(on) (Max) @ Vge, Ic
Voltage

FGA25N120ANTDTU-F109 Description

Short technical summary and product information.

The FGA25N120ANTDTU-F109 is an NPT Trench IGBT from onsemi designed for high-voltage, high-current switching applications. It features a collector-emitter voltage rating of 1200 V and a continuous collector current of 50 A at Tc=25°C (25 A at Tc=100°C). The device offers low saturation voltage (typical 2.0 V at 25 A) and low switching losses (typical turn-on energy 4.1 mJ, turn-off energy 0.96 mJ at 600 V, 25 A). Gate charge is 200 nC typical. The internal diode supports 50 A continuous forward current at 25°C and has a reverse recovery time of 350 ns.

 

This IGBT is well-suited for resonant or soft-switching topologies commonly used in induction heating and microwave oven applications. It incorporates NPT Trench technology for enhanced avalanche ruggedness and easy parallel operation. The device operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 312 W at Tc=25°C.

 

The FGA25N120ANTDTU-F109 is housed in a TO-3P-3 (SC-65-3) through-hole package, supplied in tubes of 30 pieces. It is RoHS3 compliant and Pb-free, meeting environmental standards for lead-free manufacturing.

FGA25N120ANTDTU-F109 Quick Information

Product Type: IGBT
Canonical Name: FGA25N120ANTDTU-F109 NPT Trench IGBT
Subcategory: Single IGBT

FGA25N120ANTDTU-F109 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FGA25N120ANTDTU-F109 Features

  • 1200V collector-emitter voltage rating.
  • 50A continuous collector current at 25°C.
  • Low saturation voltage of 2.0V typical.
  • Low switching loss for efficient operation.
  • RoHS compliant and Pb-free.

FGA25N120ANTDTU-F109 Applications

  • Ideal for induction heating applications.
  • Suitable for microwave oven designs.
  • Used in resonant or soft-switching circuits.

FGA25N120ANTDTU-F109 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the FGA25N120ANTDTU-F109?

1200 V.

What package does the FGA25N120ANTDTU-F109 come in?

TO-3P-3 (SC-65-3) through-hole package.

What is the operating junction temperature range?

-55°C to 150°C.

Is the FGA25N120ANTDTU-F109 RoHS compliant?

Yes, it is RoHS3 compliant and Pb-free.

What is the continuous collector current rating?

50 A at Tc=25°C, 25 A at Tc=100°C.

What are the switching energy losses?

Typical turn-on energy 4.1 mJ, turn-off energy 0.96 mJ at 600V, 25A, 10Ω, 15V.

What is the gate charge?

200 nC typical.

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