| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,319 pcs
|
1319 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
445 pcs
|
445 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Gate Charge | |
| Halogen Free | |
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| Power | |
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| Td (on | |
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| Vce(on) (Max) @ Vge, Ic | |
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The FGA25N120ANTDTU is an NPT Trench IGBT from onsemi designed for high-voltage, high-current switching applications. It features a maximum collector-emitter voltage of 1200V and a continuous collector current rating of 50A at 25°C (25A at 100°C). The device offers low saturation voltage (Vce(sat) typ 2.0V at 25A) and low switching losses (Eon 4.1mJ, Eoff 0.96mJ at 600V, 25A). It includes a freewheeling diode with 350ns reverse recovery time.
The IGBT is housed in a TO-3P-3 (SC-65-3) through-hole package with a maximum power dissipation of 312W at 25°C. Thermal resistance junction-to-case is 0.4°C/W for the IGBT and 2.0°C/W for the diode. The device is suitable for resonant or soft-switching applications such as induction heating and microwave ovens. It is Pb-Free, Halide Free, and RoHS compliant.
1200V.
TO-3P-3 (SC-65-3) through-hole package.
-55°C to 150°C.
Yes, the device is Pb-Free, Halide Free, and RoHS compliant per the datasheet.
50A at Tc=25°C, 25A at Tc=100°C.
±20V maximum.
Eon 4.1mJ, Eoff 0.96mJ at 600V, 25A, 10Ω, 15V.