SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
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238 pcs
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238 pcs | On Request | 1 | On Request | On Request | 1B31 | On Request | On Request |
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The FGA25N120ANTD is a 1200V NPT Trench Insulated Gate Bipolar Transistor (IGBT) manufactured by On Semiconductor. Utilizing Fairchild's proprietary trench design and advanced NPT technology, this IGBT provides superior conduction and switching performance, high avalanche ruggedness, and facilitates easy parallel operation.
Key electrical characteristics include a collector-emitter voltage of 1200V and a continuous collector current rating of 50A at 25°C, decreasing to 25A at 100°C. The device exhibits a low saturation voltage, typically 2.0V at 25A and 25°C, and low switching losses, with a typical turn-off loss of 0.96mJ. Its operating junction temperature ranges from -55°C to +150°C.
This IGBT is well-suited for resonant or soft switching applications such as induction heating and microwave ovens. It comes in a TO-3P package. The device features NPT Trench Technology and a positive temperature coefficient, along with extremely enhanced avalanche capability.
| Qty | Low | High |
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| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage rating for the FGA25N120ANTD is 1200V.
The typical collector current for the FGA25N120ANTD at 25°C is 50A.
The typical saturation voltage (VCE(sat)) for the FGA25N120ANTD is 2.0V at IC = 25A and TC = 25°C.
The typical turn-off switching loss (Eoff) for the FGA25N120ANTD is 0.96mJ at IC = 25A and TC = 25°C.
The FGA25N120ANTD is available in a TO-3P package.
