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FGA20S125P The FGA20S125P is a 1250V, 40A N-channel IGBT from ON Semiconductor. It uses trench field stop technology in a TO-3P-3 through-hole package.
Mfr Part #:

FGA20S125P

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FGA20S125P is a 1250V, 40A N-channel IGBT from ON Semiconductor. It uses trench field stop technology in a TO-3P-3 through-hole package.
✓ Total Stock: 435,000 pcs
$ Price Range: $1.96

FGA20S125P Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
435,000 pcs
On Request
435000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FGA20S125P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
IGBT Type
Input Type
Medical Grade
Mounting Type
Power
Storage Temperature
Supplier Device Package
Vce(on) (Max) @ Vge, Ic
Voltage
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FGA20S125P Description

Short technical summary and product information.

The FGA20S125P is a single IGBT manufactured by ON Semiconductor. It uses trench field stop technology and has a collector-emitter voltage rating of 1250 V with a collector current rating of 40 A. The device is supplied in a TO-3P-3, SC-65-3 package and is mounted using through-hole soldering.

 

Electrical specifications include a maximum collector-emitter saturation voltage of 2.5 V at Vge = 15 V and Ic = 20 A, and a gate charge of 129 nC. The IGBT has a standard input type and a power dissipation rating of 250 W. These characteristics are relevant for high-voltage power switching circuits.

 

The part is categorized as a discrete transistor for single IGBT applications. The TO-3P-3 package provides a through-hole interface for power board layouts. With a 1250 V collector-emitter rating and 40 A current capability, it is suited to power conversion stages where high-voltage and moderate-current switching are required.

FGA20S125P Quick Information

Product Type: IGBT (Insulated Gate Bipolar Transistor)
Canonical Name: ON Semiconductor FGA20S125P Trench Field Stop IGBT
Subcategory: Single IGBT

FGA20S125P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FGA20S125P Estimated Pricing

Qty Low High
450+ $1.96 $1.96

Estimated market price range - modelled values for guidance only, not live distributor offers.

FGA20S125P Features

  • 1250V collector-emitter voltage rating.
  • 40A collector current capability.
  • Trench field stop IGBT technology.
  • TO-3P-3 through-hole package.
  • 250W power dissipation rating.

FGA20S125P Applications

  • Used in high-voltage power switching circuits.
  • Suitable for 1250V power conversion stages.
  • Fits through-hole power board designs.

FGA20S125P FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the FGA20S125P?

The collector-emitter voltage (Vces) rating is 1250 V.

What is the collector current rating of the FGA20S125P?

The collector current (Ic) rating is 40 A.

What package is the FGA20S125P available in?

The device is available in a TO-3P-3, SC-65-3 package with a supplier device package of TO-3PN. It is a through-hole mount component.

Is the FGA20S125P RoHS compliant?

The existing product data lists the FGA20S125P as RoHS3 compliant. This compliance status has not been verified.

What is the maximum collector-emitter saturation voltage?

The maximum Vce(on) is 2.5 V at Vge = 15 V and Ic = 20 A.

What is the gate charge of the FGA20S125P?

The gate charge is 129 nC.

What is the power dissipation rating of the FGA20S125P?

The power dissipation rating is 250 W.

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