| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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510 pcs
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510 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
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The FGA15S125P is a Trench IGBT from ON Semiconductor, designed for high-voltage switching applications. It features a collector-emitter voltage rating of 1250V and a continuous collector current of 30A, with a maximum power dissipation of 136W. The device has a gate charge of 129 nC and a typical Vce(on) of 2.72V at 15V gate voltage and 15A collector current.
This IGBT is housed in a TO-3P-3 (SC-65-3) package with through-hole mounting, suitable for robust power circuits. The operating junction temperature range is -55°C to 175°C, allowing use in demanding thermal environments.
The Trench technology provides low on-state voltage drop and fast switching performance, making it suitable for applications such as motor drives, inverters, and power supplies. The standard input type simplifies gate drive requirements.
1250V collector-emitter voltage.
TO-3P-3, SC-65-3 (supplier device package TO-3P).
-55°C to 175°C (junction temperature).
RoHS3 Compliant (unverified).
30A.
136W.
129 nC.