| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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92 pcs
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92 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Tape & Reel |
The FGA15N120ANTD from On Semiconductor is a 1200V NPT Trench Insulated Gate Bipolar Transistor (IGBT). Utilizing Fairchild's proprietary trench design and advanced NPT technology, this IGBT offers superior conduction and switching performance, high avalanche ruggedness, and easy parallel operation.
Key electrical characteristics include a collector-emitter voltage of 1200V and a continuous collector current of 30A at 25°C, decreasing to 15A at 100°C. The typical collector-emitter saturation voltage is 1.9V at 15A and 25°C, with a typical turn-off switching loss of 0.6mJ.
This device is well-suited for applications requiring resonant or soft switching, such as induction heating and microwave ovens. It comes in a TO-3P package.
Absolute Maximum Ratings include a collector-emitter voltage of 1200V, gate-emitter voltage of ±20V, and maximum power dissipation of 186W at 25°C. The operating junction temperature ranges from -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 1200V.
The collector current at 25°C is 30A.
The typical collector-emitter saturation voltage is 1.9V at 15A and 25°C.
The typical turn-off switching loss is 0.6mJ.
The FGA15N120ANTD is available in a TO-3P package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.