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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
82,400 pcs
|
82400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Avalanche Energy (EAS) | |
| Capacitance @ Vr, F | |
| Current | |
| Forward Voltage (VF) (Typical/Maximum @ IF = 30 A, TC = 125 °C) | |
| Forward Voltage (VF) (Typical/Maximum @ IF = 30 A, TC = 175 °C) | |
| Halogen Free | |
| Junction Temperature | |
| Lead Style | |
| Mounting Type | |
| Non-Repetitive Peak Forward Surge Current (Maximum @ Half-Sine Pulse, tp=8.3 ms) | |
| Non-Repetitive Peak Forward Surge Current (Maximum @ TC=150 °C, 10 µs pulse) | |
| Non-Repetitive Peak Forward Surge Current (Maximum @ TC=25 °C, 10 µs pulse) | |
| Operating Temperature | |
| Power Dissipation (Ptot) (Maximum @ TC=150 °C) | |
| Power Dissipation (Ptot) (Maximum @ TC=25 °C) | |
| Reverse Current (IR) (Typical/Maximum @ VR=650 V, TC=125 °C) | |
| Reverse Current (IR) (Typical/Maximum @ VR=650 V, TC=175 °C) | |
| Reverse Current (IR) (Typical/Maximum @ VR=650 V, TC=25 °C) | |
| Reverse Recovery Time (trr) | |
| Reverse Voltage (Vrrm) | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Thermal Resistance - Junction to Case | |
| Voltage | |
| capacitance (Typical @ VR = 200 V, f = 100 kHz) | |
| capacitance (Typical @ VR = 400 V, f = 100 kHz) |
The FFSP3065B-F085 is a Silicon Carbide (SiC) Schottky diode from onsemi, part of the EliteSiC family. It is rated for a maximum repetitive reverse voltage of 650V and a continuous forward current of 30A at case temperatures below 135°C. The device features no reverse recovery current, enabling high-frequency switching with minimal losses. It offers a typical forward voltage of 1.38V at 30A and 25°C, and a maximum power dissipation of 197W at 25°C case temperature. The diode is avalanche rated at 144 mJ and can handle non-repetitive peak forward surge currents up to 1100A (10µs pulse).
Packaged in a through-hole TO-220-2 case, the FFSP3065B-F085 has a maximum junction temperature of 175°C and a thermal resistance junction-to-case of 0.76°C/W. It is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications. The device is Pb-Free, Halogen Free/BFR Free, and RoHS compliant. Typical applications include automotive HEV-EV onboard chargers and DC-DC converters, as well as high-frequency power factor correction circuits and switching power supplies.
| Qty | Low | High |
|---|---|---|
| 1+ | $8.92 | $8.92 |
| 10+ | $6.08 | $6.08 |
| 100+ | $4.30 | $4.30 |
| 500+ | $3.62 | $3.62 |
| 1,000+ | $3.57 | $3.57 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650 V.
30 A at case temperature below 135°C.
1.38 V.
No, it is a SiC Schottky diode with zero reverse recovery time.
TO-220-2 (through-hole).
-55°C to 175°C.
144 mJ.