FFSP3065B FFSP3065B is a 650V, 30A Silicon Carbide (SiC) Schottky diode from On Semiconductor in a TO-220-2 through-hole package.
Mfr Part #:

FFSP3065B

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FFSP3065B is a 650V, 30A Silicon Carbide (SiC) Schottky diode from On Semiconductor in a TO-220-2 through-hole package.
Total Stock: 506 pcs
$ Price Range: $3.10 - $7.52

FFSP3065B Available from 1 distributor

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Non-Authorised
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506 pcs
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FFSP3065B Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Capacitance @ Vr, F
Capacitance @ Vr, F (Typical @ VR = 200 V, f = 100 kHz)
Capacitance @ Vr, F (Typical @ VR = 400 V, f = 100 kHz)
Current
Forward Voltage (Typical/Maximum @ IF = 30 A, TC = 125 °C)
Forward Voltage (Typical/Maximum @ IF = 30 A, TC = 175 °C)
Halogen Free
Max Junction Temperature
Mounting Type
Non-Repetitive Forward Surge Current (Half-Sine, 8.3 ms)
Non-Repetitive Peak Forward Surge Current (@ TC = 150 °C, 10 µs pulse)
Non-Repetitive Peak Forward Surge Current (@ TC = 25 °C, 10 µs pulse)
Operating Temperature
Power Dissipation (@ TC = 25 °C)
Power Dissipation (@ TC=150 °C)
Reverse Current (Typical/Maximum @ VR=650 V, TC=125 °C)
Reverse Current (Typical/Maximum @ VR=650 V, TC=175 °C)
Reverse Current (Typical/Maximum @ VR=650 V, TC=25 °C)
Reverse Recovery Time (trr)
Single Pulse Avalanche Energy (EAS)
Speed
Supplier Device Package
Tape & Reel
Technology
Thermal Resistance - Junction to Case
Total Capacitive Charge (QC) @ V=400V
Voltage
Voltage - DC Reverse (VRRM)

FFSP3065B Description

Short technical summary and product information.

The FFSP3065B is a 650V, 30A Silicon Carbide (SiC) Schottky diode from On Semiconductor, designed for high-efficiency power conversion. It features zero reverse recovery time and operates with a typical forward voltage of 1.38V at 30A and 25°C. The diode offers low capacitance of 1280pF at 1V and 108pF at 400V, minimizing switching losses.

 

The device is avalanche rated at 144 mJ and can handle non-repetitive surge currents up to 1100A at 25°C (10 µs pulse). Thermal performance is supported by a maximum junction temperature of 175°C and a junction-to-case thermal resistance of 0.76°C/W, allowing power dissipation of 197W at 25°C case temperature.

 

Packaged in a TO-220-2 through-hole case, the FFSP3065B is suitable for general-purpose power switching, switch-mode power supplies, solar inverters, and UPS systems. It is Pb-free, halogen-free, and RoHS compliant.

FFSP3065B Quick Information

Product Type: Silicon Carbide Schottky Diode
Canonical Name: FFSP3065B Silicon Carbide (SiC) Schottky Diode, 650V, 30A, TO-220-2
Subcategory: SiC (Silicon Carbide) Schottky Diode

FFSP3065B Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

FFSP3065B Estimated Pricing

Qty Low High
1+ $7.52 $7.52
10+ $4.33 $4.33
100+ $3.96 $3.96
500+ $3.34 $3.34
1,000+ $3.10 $3.10

Estimated market price range - modelled values for guidance only, not live distributor offers.

FFSP3065B Features

  • 650V reverse voltage rating.
  • 30A continuous forward current.
  • Zero reverse recovery time.
  • Avalanche energy rated 144 mJ.
  • Operating temperature up to 175°C.

FFSP3065B Applications

  • Used in power factor correction circuits.
  • Ideal for solar inverter designs.
  • Suitable for high-frequency switching power supplies.
  • Applied in uninterruptible power supplies.

FFSP3065B FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum reverse voltage?

650 V.

What is the average rectified current?

30 A.

What is the forward voltage drop?

Typical 1.38 V, maximum 1.7 V at 30 A and 25°C.

What is the reverse recovery time?

0 ns (no recovery).

What package is available?

TO-220-2 through-hole package.

What is the maximum junction temperature?

175°C.

What is the surge current capability?

1100 A at 25°C for 10 µs pulse, 1000 A at 150°C.

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