Ready to onboard?
Are you ready to join DistyParts and
grow your business?
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
46,400 pcs
|
46400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Average Rectified Current (Unspecified condition) | |
| Capacitance @ Vr, F | |
| Current | |
| Forward Voltage (Maximum @ If = 20 A, TC = 25 °C) | |
| Forward Voltage (Typical @ If = 20 A, TC = 125 °C) | |
| Forward Voltage (Typical @ If = 20 A, TC = 175 °C) | |
| Halogen Free | |
| Mounting Type | |
| Non-Repetitive Forward Surge Current (Half-Sine, 8.3 ms) | |
| Non-Repetitive Peak Forward Surge Current (@ TC = 150 °C, 10 µs) | |
| Non-Repetitive Peak Forward Surge Current (@ TC = 25 °C, 10 µs) | |
| Operating Temperature | |
| Power Dissipation (@ TC = 25 °C) | |
| Power Dissipation (@ TC=150 °C) | |
| Repetitive Forward Surge Current | |
| Reverse Leakage Current (Maximum @ VR = 650 V, TC = 125 °C) | |
| Reverse Leakage Current (Maximum @ VR = 650 V, TC = 175 °C) | |
| Reverse Leakage Current (Maximum @ VR = 650 V, TC = 25 °C) | |
| Reverse Recovery Time (trr) | |
| Single Pulse Avalanche Energy | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance - Junction to Case | |
| Total Capacitive Charge | |
| Voltage | |
| Voltage - DC Reverse (Vr) (Max) |
FFSP2065A is a 650V, 25A Silicon Carbide (SiC) Schottky diode manufactured by On Semiconductor. It is housed in a through-hole TO-220-2 package and utilizes SiC Schottky technology for high efficiency and high temperature operation. The diode has a maximum junction temperature of 175°C and features zero reverse recovery time, enabling high-frequency switching applications.
Key electrical specifications include a maximum forward voltage of 1.75V at 20A and 25°C, and a typical forward voltage of 1.6V at 20A and 125°C. Reverse leakage current is 200µA at 650V and 25°C, increasing to 600µA at 175°C. The device supports non-repetitive peak forward surge current up to 1225A at 25°C (10µs pulse) and 105A for an 8.3ms half-sine wave. It is avalanche rated at 95mJ.
The diode has a total capacitive charge of 64nC typical at 400V and a junction capacitance of 1085pF at 1V, 100kHz. Power dissipation is 187W at 25°C case temperature and 31W at 150°C. Thermal resistance junction-to-case is 0.8°C/W maximum.
This diode is suitable for power switching circuits, SMPS, solar inverters, UPS, and other general-purpose applications requiring high efficiency and reliability. The device is Pb-free, Halogen-free, and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $7.47 | $7.47 |
| 10+ | $4.00 | $4.00 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum repetitive reverse voltage is 650 V.
25 A continuous forward current at case temperature below 135°C, and 20 A at case temperature below 147°C.
Maximum forward voltage is 1.75 V at 20 A and 25°C. Typical forward voltage is 1.6 V at 20 A and 125°C.
The reverse recovery time is 0 ns (no reverse recovery).
It is available in a TO-220-2 through-hole package.
The junction operating temperature range is -55°C to 175°C.
Non-repetitive peak forward surge current is 1225 A at 25°C (10 µs pulse) and 1000 A at 150°C. For an 8.3 ms half-sine pulse, it is 105 A non-repetitive and 58 A repetitive.