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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,400 pcs
|
2400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Avalanche Energy | |
| Capacitance @ Vr, F | |
| Continuous Forward Current (Nominal @ TC = 135 °C) | |
| Current | |
| Forward Voltage (Typical/Maximum @ IF = 10 A, TC = 25 °C) | |
| Forward Voltage (Typical/Maximum @ IF=10 A, TC=125 °C) | |
| Forward Voltage (Typical/Maximum @ IF=10 A, TC=175 °C) | |
| Halogen Free | |
| Junction Capacitance (Typical @ VR=200 V, f=100 kHz) | |
| Junction Capacitance (Typical @ VR=400 V, f=100 kHz) | |
| Maximum Junction Temperature | |
| Mounting Type | |
| Non-Repetitive Forward Surge Current | |
| Non-Repetitive Peak Forward Surge Current (Maximum @ TC=150 °C, 10 µs pulse) | |
| Non-Repetitive Peak Forward Surge Current (Maximum @ TC=25 °C, 10 µs pulse) | |
| Number of Pins | |
| Operating Temperature | |
| Power Dissipation (Maximum @ TC = 150 °C) | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Reverse Leakage Current (Typical/Maximum @ VR=650 V, TC=125 °C) | |
| Reverse Leakage Current (Typical/Maximum @ VR=650 V, TC=175 °C) | |
| Reverse Leakage Current (Typical/Maximum @ VR=650 V, TC=25 °C) | |
| Reverse Recovery Time (trr) | |
| Reverse Voltage | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance - Junction to Case | |
| Total Capacitive Charge | |
| Voltage |
The FFSP1065B-F085 is a Silicon Carbide (SiC) Schottky diode from On Semiconductor, rated at 650V maximum repetitive reverse voltage and 10A continuous forward current (11A at lower case temperature). It is packaged in a TO-220-2 through-hole package. Key electrical characteristics include a typical forward voltage of 1.38V at 10A and 25°C, zero reverse recovery time, and low junction capacitance of 421 pF at 1V. The device can handle non-repetitive peak forward surge currents up to 650A (10 µs pulse) and is avalanche rated at 49 mJ. Maximum junction temperature is 175°C with a junction-to-case thermal resistance of 2.0°C/W. The diode is AEC-Q101 qualified and suitable for automotive HEV-EV onboard chargers and DC-DC converters. It is RoHS compliant, Pb-Free, and Halogen Free.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.68 | $4.68 |
| 10+ | $3.09 | $3.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum repetitive reverse voltage (VRRM) is 650 V.
The continuous forward current is 10 A at TC < 139°C and 11 A at TC < 135°C.
Typical forward voltage is 1.38 V at 10 A and 25°C, with a maximum of 1.7 V.
No, the reverse recovery time is 0 ns (zero recovery).
It is available in a TO-220-2 (through-hole) package.
The maximum junction temperature is 175°C.
Yes, it is RoHS3 compliant, Pb-Free, and Halogen Free.