| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
25,600 pcs
|
25600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance @ Vr, F | |
| Current | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Operating Temperature Range | |
| Reverse Recovery Time (trr) | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Voltage |
The FFSP1065B is a Silicon Carbide (SiC) Schottky diode from onsemi, part of the EliteSiC family. It is rated for a maximum reverse voltage of 650V and a continuous forward current of 10A (at TC < 139°C). The diode features a typical forward voltage of 1.38V at 10A and 25°C, and a maximum forward voltage of 1.7V.
Key electrical characteristics include zero reverse recovery time (trr = 0 ns) due to SiC Schottky technology, enabling high-frequency switching with minimal losses. The device has a maximum junction temperature of 175°C and a thermal resistance of 2.0°C/W. It is avalanche rated at 49 mJ and can handle non-repetitive peak surge currents up to 650A (10 µs pulse at 25°C).
The diode is housed in a TO-220-2 through-hole package, suitable for easy mounting on heatsinks. It is Pb-free, Halogen-free, and RoHS compliant. Typical applications include power factor correction, solar inverters, UPS systems, and general power switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.22 | $4.22 |
| 10+ | $2.15 | $2.15 |
| 100+ | $1.94 | $1.94 |
| 500+ | $1.80 | $1.80 |
| 1,000+ | $1.51 | $1.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650 V.
10 A at case temperature below 139°C.
1.38 V typical, 1.7 V maximum.
No, it is a SiC Schottky diode with zero reverse recovery time (trr = 0 ns).
TO-220-2 through-hole package.
175°C.
650 A at 25°C for a 10 µs pulse.