| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
80,750 pcs
|
80750 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,070 pcs
|
1070 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Avalanche Energy | |
| Capacitance @ Vr, F | |
| Continuous Forward Current (Nominal @ TC < 152 °C) | |
| Current | |
| Forward Voltage (Typical/Maximum @ IF = 10 A, TC = 25 °C) | |
| Forward Voltage (Typical/Maximum @ IF=10 A, TC=125 °C) | |
| Forward Voltage (Typical/Maximum @ IF=10 A, TC=175 °C) | |
| Halogen Free | |
| Mounting Type | |
| Non Repetitive Peak Forward Surge Current (Nominal @ TC=150 °C, tp=10 µs) | |
| Non Repetitive Peak Forward Surge Current (Nominal @ TC=25 °C, tp=10 µs) | |
| Non-Repetitive Forward Surge Current (Half-Sine, 8.3 ms) | |
| Operating Temperature | |
| Power Dissipation (Nominal @ TC=150 °C) | |
| Power Dissipation (Nominal @ TC=25 °C) | |
| Repetitive Forward Surge Current (Half-Sine, 8.3 ms) | |
| Reverse Leakage Current (Maximum @ VR = 650 V, TC = 125 °C) | |
| Reverse Leakage Current (Maximum @ VR = 650 V, TC = 175 °C) | |
| Reverse Leakage Current (Maximum @ VR = 650 V, TC = 25 °C) | |
| Reverse Recovery Time (trr) | |
| Reverse Voltage (Peak Repetitive) | |
| SVHC Present | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance - Junction to Case | |
| Total Capacitive Charge | |
| Voltage | |
| capacitance (Typical @ VR = 200 V, f = 100 kHz) | |
| capacitance (Typical @ VR = 400 V, f = 100 kHz) |
The FFSP1065A is a 650V, 15A Silicon Carbide (SiC) Schottky diode from On Semiconductor's EliteSiC series. It utilizes SiC technology to deliver superior switching performance with zero reverse recovery time, enabling high-frequency operation and reduced EMI. The diode is avalanche rated at 64 mJ and offers high surge current capability.
The device has a typical forward voltage of 1.5V at 10A and 25°C, and maximum reverse leakage current of 200 µA at 650V and 25°C. It can handle continuous forward current up to 15A when case temperature is below 135°C, and 10A below 152°C. The non-repetitive peak forward surge current is 760A at 25°C for a 10 µs pulse.
The FFSP1065A is offered in a TO-220-2L through-hole package with a maximum junction-to-case thermal resistance of 1.35°C/W. It operates over a junction temperature range of -55°C to 175°C. The device is Pb-free, halogen-free, and RoHS compliant.
Typical applications include power factor correction, switching power supplies, solar inverters, and UPS systems. The zero recovery characteristic makes it ideal for high-frequency switching circuits where efficiency and thermal performance are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $5.54 | $5.54 |
| 10+ | $3.10 | $3.10 |
| 100+ | $2.74 | $2.74 |
| 500+ | $2.35 | $2.35 |
| 2,500+ | $2.18 | $2.18 |
| 5,000+ | $2.14 | $2.14 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V (peak repetitive).
15A at case temperature below 135°C, 10A at below 152°C.
1.5V typical (1.75V max) at 25°C; 1.6V typical (2.0V max) at 125°C; 1.72V typical (2.4V max) at 175°C.
No, it has zero reverse recovery time (0 ns) due to SiC Schottky technology.
TO-220-2 (through-hole), supplier device package TO-220-2L.
64 mJ (single pulse).
-55°C to 175°C junction temperature.