FFSP10120A Silicon Carbide Schottky diode rated for 1200V reverse voltage and 10A forward current. Packaged in a through-hole TO-220-2L case.
Mfr Part #:

FFSP10120A

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
Silicon Carbide Schottky diode rated for 1200V reverse voltage and 10A forward current. Packaged in a through-hole TO-220-2L case.
Total Stock: 12,800 pcs
$ Price Range: $4.34 - $8.05

FFSP10120A Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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12,800 pcs
12800 pcs On Request 1 On Request On Request On Request On Request On Request

FFSP10120A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Avalanche Energy (Single Pulse)
Capacitance @ Vr, F
Current
Current - Reverse Leakage @ Vr
Halogen Free
Max Junction Temperature
Mounting Type
Non-Repetitive Peak Forward Surge Current
Operating Temperature
Power Dissipation (@ TC = 25 °C)
Speed
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Thermal Resistance - Junction to Case
Total Capacitive Charge
Voltage
Voltage - DC Reverse (Vr) (Max)

FFSP10120A Description

Short technical summary and product information.

The FFSP10120A is a 10 A, 1200 V Silicon Carbide (SiC) Schottky diode from On Semiconductor's EliteSiC family. SiC technology provides superior switching performance with zero reverse recovery current, enabling higher efficiency and frequency operation. Key electrical specifications include a maximum forward voltage of 1.75 V at 10 A and 25°C, a reverse leakage current of 200 µA at 1200 V, and a typical capacitance of 612 pF at 1 V. The diode is avalanche rated at 100 mJ and can handle non-repetitive peak forward surge currents up to 850 A. Thermal characteristics include a maximum junction temperature of 175°C, a junction-to-case thermal resistance of 0.89°C/W, and a power dissipation of 168 W at 25°C case temperature. The device is housed in a through-hole TO-220-2L package (supplier package TO-220-2L) and is RoHS compliant, Pb-Free, and Halogen Free. Typical applications include power factor correction, switch-mode power supplies, solar inverters, and UPS power switching circuits.

FFSP10120A Quick Information

Product Type: Silicon Carbide Schottky Diode
Canonical Name: Silicon Carbide (SiC) Schottky Diode, 10 A, 1200 V, TO-220-2L
Subcategory: Silicon Carbide Schottky Diode

FFSP10120A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FFSP10120A Estimated Pricing

Qty Low High
1+ $8.05 $8.05
10+ $4.34 $4.34

Estimated market price range - modelled values for guidance only, not live distributor offers.

FFSP10120A Features

  • Zero reverse recovery for high efficiency.
  • Avalanche rated at 100 mJ.
  • High surge current capacity of 850 A.
  • Max junction temperature of 175°C.
  • RoHS compliant and Pb-Free.

FFSP10120A Applications

  • Used in power factor correction circuits.
  • Ideal for switch-mode power supplies.
  • Suitable for solar inverter designs.
  • Applied in UPS power switching circuits.

FFSP10120A FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum reverse voltage of the FFSP10120A?

1200 V.

What is the average rectified forward current rating?

10 A.

What is the forward voltage drop at rated current?

1.75 V maximum at 10 A and 25°C.

Does this diode have reverse recovery?

No, as a SiC Schottky diode it has no reverse recovery current.

What package does the FFSP10120A come in?

Through-hole TO-220-2L (supplier device package TO-220-2L).

What is the operating temperature range?

-55°C to 175°C junction temperature.

What is the non-repetitive peak forward surge current rating?

850 A at 25°C for a 10 µs pulse.

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