| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,800 pcs
|
12800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance @ Vr, F | |
| Current | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Voltage |
The FFSP10120A is a 10 A, 1200 V Silicon Carbide (SiC) Schottky diode from On Semiconductor's EliteSiC family. SiC technology provides superior switching performance with zero reverse recovery current, enabling higher efficiency and frequency operation. Key electrical specifications include a maximum forward voltage of 1.75 V at 10 A and 25°C, a reverse leakage current of 200 µA at 1200 V, and a typical capacitance of 612 pF at 1 V. The diode is avalanche rated at 100 mJ and can handle non-repetitive peak forward surge currents up to 850 A. Thermal characteristics include a maximum junction temperature of 175°C, a junction-to-case thermal resistance of 0.89°C/W, and a power dissipation of 168 W at 25°C case temperature. The device is housed in a through-hole TO-220-2L package (supplier package TO-220-2L) and is RoHS compliant, Pb-Free, and Halogen Free. Typical applications include power factor correction, switch-mode power supplies, solar inverters, and UPS power switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $8.05 | $8.05 |
| 10+ | $4.34 | $4.34 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1200 V.
10 A.
1.75 V maximum at 10 A and 25°C.
No, as a SiC Schottky diode it has no reverse recovery current.
Through-hole TO-220-2L (supplier device package TO-220-2L).
-55°C to 175°C junction temperature.
850 A at 25°C for a 10 µs pulse.