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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,270 pcs
|
2270 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance (Typical @ VR = 800 V, f = 100 kHz) | |
| Capacitance @ Vr, F | |
| Current | |
| Current - Average Rectified (Io) | |
| Forward Voltage (Typical/Maximum @ IF = 8 A, TC = 25 °C) | |
| Forward Voltage (Typical/Maximum @ IF=8 A, TC=125 °C) | |
| Forward Voltage (Typical/Maximum @ IF=8 A, TC=175 °C) | |
| Halogen Free | |
| Max Junction Temperature | |
| Mounting Type | |
| Non Repetitive Peak Forward Surge Current (Maximum @ TC = 150 °C, 10 µs) | |
| Non Repetitive Peak Forward Surge Current (Maximum @ TC = 25 °C, 10 µs) | |
| Non-Repetitive Forward Surge Current (Half-Sine) | |
| Operating Temperature | |
| Power Dissipation (Maximum @ TC = 150 °C) | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Repetitive Forward Surge Current | |
| Reverse Current (Maximum @ VR=1200 V, TC=125 °C) | |
| Reverse Current (Maximum @ VR=1200 V, TC=175 °C) | |
| Reverse Current (Maximum @ VR=1200 V, TC=25 °C) | |
| SVHC Present | |
| Single Pulse Avalanche Energy (EAS) | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance Junction-to-Case (RθJC) | |
| Total Capacitive Charge (Qc) | |
| Voltage | |
| Voltage - DC Reverse (Vr) (Max) | |
| capacitance (Typical @ VR = 400 V, f = 100 kHz) |
The FFSP08120A is a Silicon Carbide (SiC) Schottky Diode from ON Semiconductor's EliteSiC family. It is rated for a maximum reverse voltage of 1200V and a continuous forward current of 8A. This diode offers superior switching performance compared to silicon diodes, with no reverse recovery current and temperature-independent switching characteristics.
Key electrical specifications include a typical forward voltage of 1.45V at 8A and 25°C, and a maximum junction temperature of 175°C. The device can handle non-repetitive peak surge currents up to 530A at 25°C, making it robust for demanding applications. It also features an avalanche energy rating of 80mJ.
The FFSP08120A is designed for use in power switching circuits such as SMPS, solar inverters, and UPS systems. Its positive temperature coefficient and ease of paralleling make it suitable for high-power designs.
The diode is housed in a TO-220-2L through-hole package, which is Pb-Free, Halogen Free, and RoHS compliant. The operating temperature range is -55°C to 175°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $7.58 | $7.58 |
| 10+ | $4.07 | $4.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum repetitive reverse voltage (VRRM) is 1200V.
The average rectified forward current (Io) is 8A at case temperature below 148°C.
At 8A and 25°C, the typical forward voltage is 1.45V, with a maximum of 1.75V.
No, as a Silicon Carbide Schottky diode, it has no reverse recovery current, which reduces switching losses.
It is available in a TO-220-2L (TO-220-2) through-hole package.
The maximum junction temperature is 175°C.
The non-repetitive peak forward surge current is 530A at 25°C for a 10 µs pulse.