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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
300 pcs
|
300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance @ Vr, F | |
| Current | |
| Current Average Rectified (@ TC < 135 °C) | |
| Current Average Rectified (@ TC < 137 °C) | |
| Forward Voltage (Typical/Maximum @ IF = 12 A, TC = 125 °C) | |
| Forward Voltage (Typical/Maximum @ IF = 12 A, TC = 175 °C) | |
| Forward Voltage (Typical/Maximum @ IF = 12 A, TC = 25 °C) | |
| Halogen Free | |
| Max Junction Temperature (TJ) | |
| Mounting Type | |
| Non-Repetitive Forward Surge Current Half-Sine Pulse, tp=8.3 ms | |
| Non-Repetitive Peak Forward Surge Current (@ TC = 150 °C, 10 µs) | |
| Non-Repetitive Peak Forward Surge Current (@ TC = 25 °C, 10 µs) | |
| Operating Temperature | |
| Power Dissipation (@ TC = 25 °C) | |
| Power Dissipation (@ TC=150 °C) | |
| Repetitive Forward Surge Current Half-Sine Pulse, tp=8.3 ms | |
| Reverse Current (Maximum @ VR = 650 V, TC = 125 °C) | |
| Reverse Current (Maximum @ VR = 650 V, TC = 175 °C) | |
| Reverse Current (Maximum @ VR = 650 V, TC = 25 °C) | |
| Reverse Recovery Time (trr) | |
| SVHC Present | |
| Single Pulse Avalanche Energy (EAS) | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance Junction-to-Case (RθJC) | |
| Total Capacitance (C) @ VR = 1 V, f = 100 kHz | |
| Total Capacitive Charge (QC) @ V = 400 V | |
| Voltage | |
| Voltage - DC Reverse (VRRM) |
The On Semiconductor FFSM1265A is a Silicon Carbide (SiC) Schottky diode from the EliteSiC family, rated for 650V reverse voltage and 12.5A average rectified forward current (at TC < 135°C). It utilizes SiC technology to deliver superior switching performance with no reverse recovery current, enabling higher efficiency and reduced EMI in power circuits.
Key electrical characteristics include a typical forward voltage of 1.5V at 12A and 25°C, a maximum reverse current of 200µA at 650V and 25°C, and a total capacitive charge of 40nC at 400V. The diode is avalanche rated at 79mJ and can handle non-repetitive peak forward surge currents up to 700A (10µs pulse at 25°C).
The device is housed in a surface-mount 4-PowerTSFN package (also known as 4-PQFN 8x8, case 483AP) and operates over a junction temperature range of -55°C to 175°C. It is Pb-free, halogen-free/BFR-free, and RoHS compliant, making it suitable for environmentally conscious designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.79 | $4.79 |
| 10+ | $3.27 | $3.27 |
| 100+ | $2.33 | $2.33 |
| 500+ | $2.00 | $2.00 |
| 1,000+ | $1.88 | $1.88 |
| 3,000+ | $1.87 | $1.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum repetitive peak reverse voltage is 650V.
The average rectified forward current is 12A at TC < 137°C and 12.5A at TC < 135°C.
No, the FFSM1265A is a SiC Schottky diode with zero reverse recovery time (0 ns).
Typical forward voltage is 1.5V at 25°C and 1.6V at 125°C (both at 12A).
It comes in a surface-mount 4-PowerTSFN package, also known as 4-PQFN (8x8) or case 483AP.
The maximum junction temperature is 175°C.
Yes, the device is RoHS3 compliant, Pb-free, and halogen-free/BFR-free as stated in the datasheet.