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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance @ Vr, F | |
| Current | |
| Forward Current Max (Maximum @ TC < 135 °C) | |
| Forward Current Max (Maximum @ TC < 150 °C) | |
| Forward Voltage (Typical/Maximum @ IF=10 A, Tj=25 °C) | |
| Halogen Free | |
| Mounting Type | |
| Non-Repetitive Forward Surge Current (Half-Sine Pulse, tP = 8.3 ms, TC = 25°C) | |
| Non-Repetitive Peak Forward Surge Current (Maximum @ tp = 10 µs, TC = 150 °C) | |
| Non-Repetitive Peak Forward Surge Current (Maximum @ tp = 10 µs, TC = 25 °C) | |
| Operating Junction Temperature Range | |
| Operating Temperature | |
| Peak Repetitive Reverse Voltage | |
| Power Dissipation (Maximum @ TC = 150 °C) | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Reverse Current (Typical/Maximum @ VR=650 V, TJ=25 °C) | |
| Reverse Recovery Time (trr) | |
| Single Pulse Avalanche Energy | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance - Junction to Case | |
| Total Capacitance (Typical @ VR = 1 V, f = 100 kHz) | |
| Total Capacitance (Typical @ VR = 300 V, f = 100 kHz) | |
| Total Capacitance (Typical @ VR = 600 V, f = 100 kHz) | |
| Total Capacitive Charge (Typical @ V = 400 V) | |
| Voltage |
The FFSM1065B is a 650V, 10A Silicon Carbide (SiC) Schottky diode from On Semiconductor's EliteSiC family. This diode utilizes SiC technology to deliver superior switching performance with zero reverse recovery time, enabling higher efficiency and reduced EMI in power circuits. The device is rated for continuous forward current of 10A at case temperatures below 150°C, and 13.5A below 135°C, with a typical forward voltage of 1.38V at 10A and 25°C.
Key electrical characteristics include a maximum reverse current of 40µA at 650V, a total capacitive charge of 25nC at 400V, and a single-pulse avalanche energy rating of 49mJ. The diode can handle non-repetitive peak forward surge currents up to 532A for 10µs pulses at 25°C. Thermal performance is supported by a junction-to-case thermal resistance of 1.53°C/W and a maximum junction temperature of 175°C.
The FFSM1065B is housed in a surface-mount 4-PowerTSFN package (also known as 4-PQFN 8x8mm), which is Pb-free, Halogen-free, and RoHS compliant. It is suitable for applications such as SMPS, solar inverters, UPS, and general power switching circuits requiring high efficiency and reliability.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.88 | $3.88 |
| 10+ | $2.61 | $2.61 |
| 100+ | $2.08 | $2.08 |
| 500+ | $1.83 | $1.83 |
| 1,000+ | $1.71 | $1.71 |
| 3,000+ | $1.49 | $1.49 |
| 6,000+ | $1.48 | $1.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The peak repetitive reverse voltage is 650V.
The continuous forward current is 10A at case temperature below 150°C, and 13.5A below 135°C.
The typical forward voltage is 1.38V at 10A and 25°C, with a maximum of 1.7V.
No, as a SiC Schottky diode, it has zero reverse recovery time (0 ns).
It is available in a surface-mount 4-PowerTSFN package (4-PQFN 8x8mm).
The operating junction temperature range is -55°C to 175°C.
The single pulse avalanche energy is 49 mJ at 25°C.