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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| C (Typical @ VR=1 V, f=100 kHz) | |
| C (Typical @ VR=200 V, f=100 kHz) | |
| Capacitance @ Vr, F | |
| Current | |
| Halogen Free | |
| IF (Maximum @ TC < 140 °C) | |
| IF (Maximum @ TC=135 °C) | |
| IFSM (Maximum @ Half-sine, tp=8.3 ms) | |
| IFSM (Maximum @ TC=150 °C, 10 µs pulse) | |
| IFSM (Maximum @ TC=25 °C, 10 µs pulse) | |
| IR (Maximum @ VR=650 V, TC=125 °C) | |
| IR (Maximum @ VR=650 V, TC=175 °C) | |
| IR (Maximum @ VR=650 V, TC=25 °C) | |
| Mounting Type | |
| Operating Temperature | |
| Ptot (Maximum @ TC=150 °C) | |
| Ptot (Maximum @ TC=25 °C) | |
| Repetitive Forward Surge Current | |
| Reverse Recovery Time (trr) | |
| Reverse Voltage | |
| Single Pulse Avalanche Energy | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| TJ, TSTG (Minimum/Maximum) | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance - Junction to Case | |
| Total Capacitive Charge | |
| VF (Typical/Maximum @ IF=10 A, TC=125 °C) | |
| VF (Typical/Maximum @ IF=10 A, TC=175 °C) | |
| VF (Typical/Maximum @ IF=10 A, TC=25 °C) | |
| Voltage |
The FFSM1065A is a 650V, 10A/11A Silicon Carbide (SiC) Schottky diode manufactured by On Semiconductor. It utilizes SiC technology to achieve zero reverse recovery current, enabling high-frequency operation with reduced switching losses. The diode is rated for a maximum junction temperature of 175°C and offers a typical forward voltage of 1.5V at 10A and 25°C. It is avalanche rated at 47 mJ and can handle non-repetitive surge currents up to 600A for 10µs pulses. Typical applications include switch-mode power supplies (SMPS), solar inverters, UPS systems, and power switching circuits. The device is housed in a 4-Pin Power88 PQFN surface mount package (case 483AP) with dimensions 8x8mm, featuring a cathode and multiple anode pins for efficient thermal management. It is Pb-Free, Halogen Free, and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $5.78 | $5.78 |
| 10+ | $3.85 | $3.85 |
| 100+ | $2.59 | $2.59 |
| 500+ | $2.38 | $2.38 |
| 1,000+ | $2.30 | $2.30 |
| 3,000+ | $2.30 | $2.30 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The diode has a peak repetitive reverse voltage (VRRM) of 650V.
Continuous forward current is 10A at case temperature below 140°C and 11A at case temperature below 135°C.
Typical forward voltage is 1.5V at 10A and 25°C, with a maximum of 1.75V under the same conditions.
The diode has zero reverse recovery time (trr = 0 ns) due to SiC Schottky technology.
The device is available in a 4-PQFN Power88 surface mount package (case 483AP, 8x8mm).
The diode can handle a non-repetitive peak forward surge current of 600A at 25°C for a 10µs pulse and 580A at 150°C.
The operating junction temperature range is -55°C to 175°C.