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FFSM0865B FFSM0865B is a 650V, 11.6A Silicon Carbide Schottky diode from On Semiconductor. It features zero reverse recovery time and high surge current capability in a 4-PQFN surface mount package.
Mfr Part #:

FFSM0865B

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
FFSM0865B is a 650V, 11.6A Silicon Carbide Schottky diode from On Semiconductor. It features zero reverse recovery time and high surge current capability in a 4-PQFN surface mount package.
Total Stock: 165,636 pcs
$ Price Range: $1.14 - $3.80

FFSM0865B Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
164,636 pcs
164636 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request

FFSM0865B Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Capacitance @ Vr, F
Continuous Forward Current (Nominal @ TC < 153 °C)
Continuous Forward Current (Nominal @ TC = 135 °C)
Current
Forward Voltage (Typical @ IF = 8.0 A, TJ = 125 °C)
Forward Voltage (Typical @ IF = 8.0 A, TJ = 150 °C)
Forward Voltage (Typical/Maximum @ IF = 8.0 A, TJ = 25 °C)
Halogen Free
Industrial Grade
Max Junction Temperature
Medical Grade
Military Grade
Mounting Type
Non Repetitive Peak Forward Surge Current (Nominal @ tP = 10 µs, TC = 150 °C)
Non Repetitive Peak Forward Surge Current (Nominal @ tP = 10 µs, TC = 25 °C)
Non-Repetitive Forward Surge Current (Half-Sine Pulse, tP = 8.3 ms, TC = 25°C)
Operating Junction Temperature Range
Operating Temperature
Peak Repetitive Reverse Voltage
Power Dissipation (Nominal @ TC=150 °C)
Power Dissipation (Nominal @ TC=25 °C)
Reverse Current (Typical/Maximum @ VR=650 V, TJ=125 °C)
Reverse Current (Typical/Maximum @ VR=650 V, TJ=175 °C)
Reverse Current (Typical/Maximum @ VR=650 V, TJ=25 °C)
Reverse Recovery Time (trr)
SVHC Present
Single Pulse Avalanche Energy
Speed
Storage Temperature
Storage Temperature Range
Supplier Device Package
Tape & Reel
Technology
Thermal Resistance - Junction to Case
Total Capacitance (Typical @ VR = 1 V, f = 100 kHz)
Total Capacitance (Typical @ VR=200 V, f=100 kHz)
Total Capacitance (Typical @ VR=400 V, f=100 kHz)
Total Capacitive Charge
Voltage

FFSM0865B Description

Short technical summary and product information.

The FFSM0865B is a Silicon Carbide (SiC) Schottky diode from On Semiconductor's EliteSiC family. It is rated for a peak repetitive reverse voltage of 650 V and a continuous forward current of 11.6 A at case temperatures below 135°C. The diode offers a typical forward voltage of 1.39 V at 8 A and 25°C, with a maximum of 1.7 V. Key advantages of SiC technology include zero reverse recovery time (trr = 0 ns), which reduces switching losses and EMI, and temperature-independent switching characteristics. The device is avalanche rated at 33 mJ and can handle non-repetitive peak forward surge currents up to 490 A for 10 µs at 25°C. It is designed for applications such as power switching circuits, SMPS, and solar inverters. The diode is housed in a 4-PowerTSFN surface mount package (4-PQFN 8x8 mm) and offers a junction-to-case thermal resistance of 1.64 °C/W. It is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.

FFSM0865B Quick Information

Product Type: SiC Schottky Diode
Canonical Name: FFSM0865B Silicon Carbide (SiC) Schottky Diode, 650 V, 11.6 A, 4-PQFN (8x8)
Subcategory: Rectifiers - Single

FFSM0865B Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FFSM0865B Estimated Pricing

Qty Low High
1+ $3.80 $3.80
10+ $2.48 $2.48
100+ $1.74 $1.74
500+ $1.38 $1.38
1,000+ $1.29 $1.29
3,000+ $1.18 $1.18
6,000+ $1.14 $1.14

Estimated market price range - modelled values for guidance only, not live distributor offers.

FFSM0865B Features

  • Zero reverse recovery time (0 ns).
  • 650 V peak repetitive reverse voltage.
  • 11.6 A continuous forward current.
  • Avalanche energy rated at 33 mJ.
  • Surface mount 4-PQFN (8x8) package.

FFSM0865B Applications

  • Used in power switching circuits.
  • Suitable for SMPS and solar inverters.
  • Ideal for UPS and power factor correction.

FFSM0865B FAQs

7 frequently asked questions generated from this part’s specifications.
What is the peak repetitive reverse voltage of the FFSM0865B?

650 V.

What is the continuous forward current rating?

11.6 A at TC < 135°C, 8.0 A at TC < 153°C.

What is the forward voltage at 8 A?

1.39 V typical, 1.7 V maximum at 25°C.

Does this diode have reverse recovery time?

No, zero reverse recovery time due to SiC Schottky technology.

What package is the FFSM0865B available in?

4-PowerTSFN surface mount package, supplier device package 4-PQFN (8x8).

What is the operating junction temperature range?

-55°C to 175°C.

Is the FFSM0865B RoHS compliant?

Yes, RoHS3 compliant, Pb-Free, Halogen Free/BFR Free.

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