| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
15,000 pcs
|
15000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Capacitance @ Vr, F | |
| Current | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Reverse Recovery Time (trr) | |
| Speed | |
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| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Voltage |
The FFSM0465A is a Silicon Carbide (SiC) Schottky diode from onsemi, part of the EliteSiC family. It is designed for high-efficiency power conversion applications requiring fast switching with minimal losses. With a maximum junction temperature of 175°C and avalanche energy rating of 23 mJ, it offers robust performance in demanding environments.
Key electrical specifications include a peak repetitive reverse voltage of 650 V, a continuous forward current of 4 A at case temperature below 152°C (5.7 A at 135°C), and a typical forward voltage of 1.50 V at 4 A and 25°C. The device exhibits zero reverse recovery current, eliminating switching losses, and features a low total capacitive charge of 15 nC. Surge current capability reaches 320 A for a 10 µs pulse at 25°C.
Thermal characteristics include a maximum junction-to-case thermal resistance of 3.5°C/W and a total power dissipation of 43 W at 25°C case temperature. The diode is housed in a surface-mount 4-PQFN (8x8) package (4-PowerTSFN), suitable for compact PCB layouts. The product is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.30 | $4.30 |
| 10+ | $2.83 | $2.83 |
| 100+ | $1.99 | $1.99 |
| 500+ | $1.61 | $1.61 |
| 1,000+ | $1.55 | $1.55 |
| 3,000+ | $1.55 | $1.55 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650 V.
4 A at case temperature below 152°C, and 5.7 A at case temperature below 135°C.
Typically 1.50 V at 25°C, with a maximum of 1.75 V.
No, it has zero reverse recovery time due to SiC Schottky technology.
4-PQFN (8x8) surface mount package, also known as 4-PowerTSFN.
-55°C to 175°C.
23 mJ.