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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
900 pcs
|
900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| AEC-Q101 | |
| Automotive Grade | |
| Avalanche Energy (EAS) | |
| Capacitance @ Vr, F | |
| Capacitive Charge (QC) | |
| Continuous Forward Current (Maximum @ TC < 132 °C) | |
| Continuous Forward Current (Maximum @ TC < 135 °C) | |
| Current | |
| Forward Voltage (Typical/Maximum @ IF = 50 A, TC = 125 °C) | |
| Forward Voltage (Typical/Maximum @ IF = 50 A, TC = 25 °C) | |
| Forward Voltage (Typical/Maximum @ IF=50 A, TC=175 °C) | |
| Halogen Free | |
| Junction Capacitance (Typical @ VR=1 V, f=100 kHz) | |
| Junction Capacitance (Typical @ VR=300 V, f=100 kHz) | |
| Junction Capacitance (Typical @ VR=600 V, f=100 kHz) | |
| Junction Temperature Max | |
| Mounting Torque | |
| Mounting Type | |
| Non-Repetitive Peak Forward Surge Current (Maximum @ TC = 150 °C, tP = 10 µs) | |
| Non-Repetitive Peak Forward Surge Current (Maximum @ TC = 25 °C, tP = 10 µs) | |
| Non-repetitive Peak Forward Surge Current (Maximum @ TC=25 °C, tp=8.3 ms, half-sine) | |
| Operating Temperature | |
| Power Dissipation (Maximum @ TC = 150 °C) | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Reverse Current (Typical/Maximum @ VR=650 V, TC=125 °C) | |
| Reverse Current (Typical/Maximum @ VR=650 V, TC=175 °C) | |
| Reverse Current (Typical/Maximum @ VR=650 V, TC=25 °C) | |
| Reverse Recovery Time (trr) | |
| Reverse Voltage (Vrrm) | |
| SVHC Present | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance (RthJC) | |
| Voltage |
The FFSH5065B-F085 is a Silicon Carbide (SiC) Schottky diode from On Semiconductor's EliteSiC family. It is rated for a maximum repetitive reverse voltage of 650V and a continuous forward current of 50A at case temperatures below 132°C. The device features a typical forward voltage of 1.38V at 50A and 25°C, with a maximum of 1.7V. As a SiC Schottky diode, it exhibits zero reverse recovery time, enabling high-frequency switching with minimal losses.
This diode is avalanche rated at 225 mJ and can handle non-repetitive surge currents up to 1358A for 10 µs pulses. The junction-to-case thermal resistance is 0.5°C/W, and the maximum junction temperature is 175°C. It is housed in a TO-247-2 through-hole package and is designed for automotive applications, being AEC-Q101 qualified and PPAP capable.
Typical applications include automotive HEV-EV onboard chargers and DC-DC converters, where its high efficiency and fast switching characteristics improve system performance. The device is RoHS compliant, Pb-Free, and Halogen Free.
| Qty | Low | High |
|---|---|---|
| 1+ | $18.38 | $18.38 |
| 10+ | $11.39 | $11.39 |
| 120+ | $9.85 | $9.85 |
| 510+ | $9.18 | $9.18 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum repetitive reverse voltage (VRRM) is 650V.
The continuous forward current is 50A at case temperature below 132°C, and 48A at case temperature below 135°C.
At 50A and 25°C, the typical forward voltage is 1.38V and the maximum is 1.7V.
No, as a SiC Schottky diode it has zero reverse recovery time (0 ns).
It is available in a TO-247-2 through-hole package.
Yes, it is AEC-Q101 qualified and PPAP capable.
The operating and storage temperature range is -55°C to 175°C.