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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
489 pcs
|
489 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Capacitance @ Vr, F | |
| Current | |
| Forward Current Continuous (Nominal @ TC<144 °C) | |
| Forward Voltage (Typical/Maximum @ IF = 50 A, TC = 125 °C) | |
| Forward Voltage (Typical/Maximum @ IF=50 A, TC=175 °C) | |
| Halogen Free | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Mounting Torque (M3 Screw) | |
| Mounting Type | |
| Non-Repetitive Forward Surge Current (Half-Sine 8.3ms) | |
| Non-Repetitive Peak Forward Surge Current (Maximum @ tp = 10 µs, TC = 150 °C) | |
| Non-Repetitive Peak Forward Surge Current (Maximum @ tp = 10 µs, TC = 25 °C) | |
| Operating Temperature | |
| Peak Repetitive Reverse Voltage (VRRM) | |
| Power Dissipation (Maximum @ TC = 150 °C) | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Repetitive Forward Surge Current (Half-Sine 8.3ms) | |
| Reverse Current (Maximum @ VR = 650 V, TC = 125 °C) | |
| Reverse Current (Maximum @ VR = 650 V, TC = 175 °C) | |
| Reverse Current (Maximum @ VR = 650 V, TC = 25 °C) | |
| Reverse Recovery Time (trr) | |
| SVHC Present | |
| Single Pulse Avalanche Energy (EAS) | |
| Speed | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance - Junction to Case | |
| Total Capacitance (Typical @ VR=200 V, f=100 kHz) | |
| Total Capacitive Charge (Qc) | |
| Voltage |
The FFSH5065A is a Silicon Carbide (SiC) Schottky diode from onsemi, designed for high-efficiency power switching applications. It features a 650V peak repetitive reverse voltage and a continuous forward current rating of 60A (at TC<135°C) or 50A (at TC<144°C). The diode exhibits zero reverse recovery time (trr = 0 ns), eliminating switching losses and enabling high-frequency operation.
Electrical characteristics include a low forward voltage of 1.51V typ at 50A and 25°C, and a maximum 1.75V. The diode is avalanche rated at 240 mJ and can handle non-repetitive surge currents up to 1400A (10 µs pulse). Total capacitive charge is 147 nC typical at 400V. The device operates over a junction temperature range of -55°C to 175°C.
The FFSH5065A is housed in a through-hole TO-247-2 package, which offers excellent thermal performance with a junction-to-case thermal resistance of 0.35°C/W. The package is RoHS compliant, Pb-free, and halogen-free. It is suitable for applications such as power factor correction, solar inverters, SMPS, and UPS systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $14.62 | $14.62 |
| 10+ | $8.88 | $8.88 |
| 120+ | $8.12 | $8.12 |
| 510+ | $7.92 | $7.92 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The FFSH5065A has a peak repetitive reverse voltage (VRRM) of 650V.
The continuous forward current rating is 60A at case temperature below 135°C, and 50A at case temperature below 144°C.
At 25°C, the forward voltage is typically 1.51V and maximum 1.75V at 50A forward current.
The FFSH5065A has zero reverse recovery time (trr = 0 ns), characteristic of SiC Schottky diodes.
The FFSH5065A is offered in a through-hole TO-247-2 package (2 leads).
The single pulse avalanche energy (EAS) is rated at 240 mJ at starting Tj=25°C.