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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,260 pcs
|
1260 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,260 pcs
|
1260 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| AEC-Q101 | |
| Automotive Grade | |
| Avalanche Energy | |
| Capacitance (Typical @ VR=300 V, f=100 kHz) | |
| Capacitance @ Vr, F | |
| Capacitive Charge | |
| Current | |
| Forward Current (Maximum @ TC < 136 °C, Per Device) | |
| Forward Current (Maximum @ TC < 136 °C, Per Leg) | |
| Forward Voltage (Typical/Maximum @ IF=20 A, TC=125 °C) | |
| Forward Voltage (Typical/Maximum @ IF=20 A, TC=175 °C) | |
| Forward Voltage (Typical/Maximum @ IF=20 A, TC=25 °C) | |
| Halogen Free | |
| Maximum Junction Temperature | |
| Mounting Torque | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Maximum @ TC = 150 °C) | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Reverse Current (Typical/Maximum @ VR=650 V, TC=125 °C) | |
| Reverse Current (Typical/Maximum @ VR=650 V, TC=175 °C) | |
| Reverse Current (Typical/Maximum @ VR=650 V, TC=25 °C) | |
| Reverse Recovery Time (trr) | |
| Reverse Voltage | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Surge Current (Maximum @ TC = 150 °C, 10 µs pulse) | |
| Surge Current (Maximum @ TC = 25 °C, 10 µs pulse) | |
| Surge Current (Maximum @ tp = 8.3 ms, TC = 25 °C) | |
| Technology | |
| Thermal Resistance (Junction to Case) (Maximum @ Per Device) | |
| Thermal Resistance Junction To Case (Maximum @ per leg) | |
| Voltage |
The FFSH4065BDN-F085 is a Silicon Carbide (SiC) Schottky diode from On Semiconductor's EliteSiC series. It features a maximum reverse voltage of 650V and a continuous forward current of 20A per leg (40A per device) at case temperatures below 136°C. The diode offers zero reverse recovery time, enabling high-frequency switching with minimal losses. It is avalanche rated at 94 mJ and can handle non-repetitive surge currents up to 889A (10 µs pulse) at 25°C.
Typical forward voltage is 1.38V at 20A and 25°C, rising to 1.72V at 175°C. Reverse leakage current is extremely low, typically 0.5 µA at 25°C and 650V. The device has a maximum junction temperature of 175°C and a junction-to-case thermal resistance of 1.17°C/W per leg. Total power dissipation is 127W at 25°C case temperature.
The diode is housed in a TO-247-3 through-hole package with three leads (anode, cathode/case, anode). It is AEC-Q101 qualified for automotive applications and is RoHS, Pb-Free, and Halogen-Free compliant. Typical applications include automotive HEV/EV onboard chargers and DC-DC converters.
| Qty | Low | High |
|---|---|---|
| 1+ | $14.38 | $14.38 |
| 30+ | $8.72 | $8.72 |
| 60+ | $8.04 | $8.04 |
| 120+ | $7.48 | $7.48 |
| 510+ | $6.69 | $6.69 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage is 650V.
The continuous forward current is 20A per leg (40A per device) at case temperature below 136°C.
The typical forward voltage is 1.38V at 20A and 25°C, with a maximum of 1.7V.
No, the FFSH4065BDN-F085 has zero reverse recovery time due to its SiC Schottky technology.
It is available in a TO-247-3 through-hole package.
The maximum junction temperature is 175°C.
Yes, it is AEC-Q101 qualified.