FFSH4065BDN-F085 Silicon Carbide Schottky diode rated for 650V reverse voltage and 20A forward current per leg (40A per device). Packaged in a TO-247-3 through-hole case, AEC-Q101 qualified for automotive applications.
Mfr Part #:

FFSH4065BDN-F085

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
Silicon Carbide Schottky diode rated for 650V reverse voltage and 20A forward current per leg (40A per device). Packaged in a TO-247-3 through-hole case, AEC-Q101 qualified for automotive applications.
Total Stock: 2,520 pcs
$ Price Range: $6.69 - $14.38

FFSH4065BDN-F085 Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,260 pcs
1260 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,260 pcs
1260 pcs On Request 1 On Request On Request On Request On Request On Request

FFSH4065BDN-F085 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
AEC-Q101
Automotive Grade
Avalanche Energy
Capacitance (Typical @ VR=300 V, f=100 kHz)
Capacitance @ Vr, F
Capacitive Charge
Current
Forward Current (Maximum @ TC < 136 °C, Per Device)
Forward Current (Maximum @ TC < 136 °C, Per Leg)
Forward Voltage (Typical/Maximum @ IF=20 A, TC=125 °C)
Forward Voltage (Typical/Maximum @ IF=20 A, TC=175 °C)
Forward Voltage (Typical/Maximum @ IF=20 A, TC=25 °C)
Halogen Free
Maximum Junction Temperature
Mounting Torque
Mounting Type
Operating Temperature
Power Dissipation (Maximum @ TC = 150 °C)
Power Dissipation (Maximum @ TC=25 °C)
Reverse Current (Typical/Maximum @ VR=650 V, TC=125 °C)
Reverse Current (Typical/Maximum @ VR=650 V, TC=175 °C)
Reverse Current (Typical/Maximum @ VR=650 V, TC=25 °C)
Reverse Recovery Time (trr)
Reverse Voltage
Speed
Storage Temperature
Supplier Device Package
Surge Current (Maximum @ TC = 150 °C, 10 µs pulse)
Surge Current (Maximum @ TC = 25 °C, 10 µs pulse)
Surge Current (Maximum @ tp = 8.3 ms, TC = 25 °C)
Technology
Thermal Resistance (Junction to Case) (Maximum @ Per Device)
Thermal Resistance Junction To Case (Maximum @ per leg)
Voltage

FFSH4065BDN-F085 Description

Short technical summary and product information.

The FFSH4065BDN-F085 is a Silicon Carbide (SiC) Schottky diode from On Semiconductor's EliteSiC series. It features a maximum reverse voltage of 650V and a continuous forward current of 20A per leg (40A per device) at case temperatures below 136°C. The diode offers zero reverse recovery time, enabling high-frequency switching with minimal losses. It is avalanche rated at 94 mJ and can handle non-repetitive surge currents up to 889A (10 µs pulse) at 25°C.

 

Typical forward voltage is 1.38V at 20A and 25°C, rising to 1.72V at 175°C. Reverse leakage current is extremely low, typically 0.5 µA at 25°C and 650V. The device has a maximum junction temperature of 175°C and a junction-to-case thermal resistance of 1.17°C/W per leg. Total power dissipation is 127W at 25°C case temperature.

 

The diode is housed in a TO-247-3 through-hole package with three leads (anode, cathode/case, anode). It is AEC-Q101 qualified for automotive applications and is RoHS, Pb-Free, and Halogen-Free compliant. Typical applications include automotive HEV/EV onboard chargers and DC-DC converters.

FFSH4065BDN-F085 Quick Information

Product Type: Silicon Carbide Schottky Diode
Series: EliteSiC
Canonical Name: FFSH4065BDN-F085 Silicon Carbide Schottky Diode
Subcategory: Schottky Diodes

FFSH4065BDN-F085 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FFSH4065BDN-F085 Estimated Pricing

Qty Low High
1+ $14.38 $14.38
30+ $8.72 $8.72
60+ $8.04 $8.04
120+ $7.48 $7.48
510+ $6.69 $6.69

Estimated market price range - modelled values for guidance only, not live distributor offers.

FFSH4065BDN-F085 Features

  • 650V reverse voltage rating.
  • 20A forward current per leg (40A total).
  • Zero reverse recovery time.
  • Avalanche rated at 94 mJ.
  • AEC-Q101 qualified for automotive.

FFSH4065BDN-F085 Applications

  • Automotive HEV-EV onboard chargers.
  • Automotive HEV-EV DC-DC converters.
  • High-frequency power factor correction circuits.
  • Switch-mode power supplies requiring low EMI.

FFSH4065BDN-F085 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum reverse voltage of the FFSH4065BDN-F085?

The maximum reverse voltage is 650V.

What is the forward current rating of this diode?

The continuous forward current is 20A per leg (40A per device) at case temperature below 136°C.

What is the typical forward voltage at 20A and 25°C?

The typical forward voltage is 1.38V at 20A and 25°C, with a maximum of 1.7V.

Does this diode have reverse recovery time?

No, the FFSH4065BDN-F085 has zero reverse recovery time due to its SiC Schottky technology.

What package is the FFSH4065BDN-F085 available in?

It is available in a TO-247-3 through-hole package.

What is the maximum junction temperature?

The maximum junction temperature is 175°C.

Is the FFSH4065BDN-F085 qualified for automotive applications?

Yes, it is AEC-Q101 qualified.

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