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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,250 pcs
|
2250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance @ Vr, F | |
| Current | |
| Current Average Rectified (Maximum @ TC < 135 °C) | |
| Current Average Rectified (Maximum @ TC < 145 °C) | |
| Forward Voltage (Typical/Maximum @ IF = 40 A, TC = 125 °C) | |
| Forward Voltage (Typical/Maximum @ IF = 40 A, TC = 175 °C) | |
| Forward Voltage (Typical/Maximum @ IF = 40 A, TC = 25 °C) | |
| Halogen Free | |
| Max Junction Temperature | |
| Mounting Type | |
| Non Repetitive Peak Forward Surge Current (Maximum @ TC = 150 °C, 10 µs) | |
| Non Repetitive Peak Forward Surge Current (Maximum @ TC = 25 °C, 10 µs) | |
| Non-Repetitive Forward Surge Current (IFSM) | |
| Operating Temperature | |
| Power Dissipation (Maximum @ TC = 150 °C) | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Repetitive Forward Surge Current (IFRM) | |
| Reverse Current (Maximum @ VR = 650 V, TC = 125 °C) | |
| Reverse Current (Maximum @ VR = 650 V, TC = 175 °C) | |
| Reverse Current (Maximum @ VR = 650 V, TC = 25 °C) | |
| Reverse Recovery Time (trr) | |
| Single Pulse Avalanche Energy (EAS) | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance Junction-to-Case (RθJC) | |
| Total Capacitive Charge (Qc) | |
| Voltage | |
| capacitance (Typical @ VR = 200 V, f = 100 kHz) | |
| capacitance (Typical @ VR = 400 V, f = 100 kHz) |
The FFSH4065A is a Silicon Carbide (SiC) Schottky diode from On Semiconductor, rated for 650V reverse voltage and 40A continuous forward current (at TC<145°C). It is housed in a through-hole TO-247-2 package. SiC technology enables superior switching performance with no reverse recovery current, temperature-independent switching, and excellent thermal performance.
Key electrical characteristics include a forward voltage of 1.50V typical at 25°C and 40A, and a low reverse leakage current of 200µA at 650V. The device can handle high surge currents up to 1300A (non-repetitive, 10µs) and has an avalanche energy rating of 182mJ. The junction-to-case thermal resistance is 0.43°C/W, allowing a maximum junction temperature of 175°C.
This diode is designed for applications such as power factor correction, SMPS, solar inverters, and UPS systems. It offers ease of paralleling due to positive temperature coefficient and is Pb-free, Halogen-free, and RoHS compliant. The TO-247-2 package provides robust through-hole mounting for high-power designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $12.78 | $12.78 |
| 30+ | $7.74 | $7.74 |
| 120+ | $6.64 | $6.64 |
| 510+ | $6.60 | $6.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
40A at case temperature below 145°C, or 48A below 135°C.
Typical 1.50V at 40A and 25°C, maximum 1.75V.
0 ns – no reverse recovery due to SiC Schottky technology.
TO-247-2 through-hole package.
175°C.
Non-repetitive peak surge current 1300A at 25°C for 10µs.