| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,112 pcs
|
4112 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Diode Configuration | |
| Mounting Type | |
| SVHC Present | |
| Speed | |
| Technology |
The FFSH40120ADN from On Semiconductor is a high-performance Silicon Carbide (SiC) rectifier diode array. This component is designed for demanding applications requiring high voltage and current handling capabilities.
Key electrical specifications include a maximum DC reverse voltage of 1200V and an average rectified current of 20A per diode. It features a fast recovery speed of less than 500ns and a low forward voltage drop of 1.75V at 20A. The reverse leakage current is rated at 200 µA at 1200V.
This diode array is configured as a 1 Pair Common Cathode and utilizes SiC technology for enhanced performance. It is housed in a TO-247-3 package and is designed for through-hole mounting.
The FFSH40120ADN is suitable for various power electronics applications where efficiency and reliability are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum DC reverse voltage for the FFSH40120ADN is 1200V.
The average rectified current per diode for the FFSH40120ADN is 20A.
The maximum forward voltage for the FFSH40120ADN is 1.75V when the forward current is 20A.
The reverse recovery time for the FFSH40120ADN is less than or equal to 500ns.
The FFSH40120ADN is supplied in a TO-247-3 package.
The FFSH40120ADN utilizes Silicon Carbide (SiC) technology.
The diode configuration for the FFSH40120ADN is 1 Pair Common Cathode.