Ready to onboard?
Are you ready to join DistyParts and
grow your business?
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,600 pcs
|
3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Average Rectified Current (Maximum @ TC < 145 °C) | |
| Average Rectified Current (Maximum @ TC = 135 °C) | |
| Capacitance @ Vr, F | |
| Current | |
| Forward Voltage (Typical/Maximum @ IF = 30 A, TC = 125 °C) | |
| Forward Voltage (Typical/Maximum @ IF = 30 A, TC = 175 °C) | |
| Forward Voltage (Typical/Maximum @ IF = 30 A, TC = 25 °C) | |
| Max Junction Temperature | |
| Mounting Type | |
| Non Repetitive Peak Forward Surge Current (Maximum @ TC = 150 °C, 10 µs) | |
| Non Repetitive Peak Forward Surge Current (Maximum @ TC = 25 °C, 10 µs) | |
| Non-Repetitive Forward Surge Current | |
| Operating Temperature | |
| Power Dissipation (Maximum @ TC = 150 °C) | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Repetitive Forward Surge Current | |
| Reverse Current (Maximum @ VR = 650 V, TC = 125 °C) | |
| Reverse Current (Maximum @ VR = 650 V, TC = 175 °C) | |
| Reverse Current (Maximum @ VR = 650 V, TC = 25 °C) | |
| Reverse Recovery Time (trr) | |
| Single Pulse Avalanche Energy (EAS) | |
| Speed | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance Junction-to-Case (RθJC) | |
| Total Capacitive Charge (Qc) | |
| Voltage | |
| capacitance (Typical @ VR = 200 V, f = 100 kHz) | |
| capacitance (Typical @ VR = 400 V, f = 100 kHz) |
The FFSH3065A is a Silicon Carbide (SiC) Schottky diode manufactured by onsemi. It is rated for a maximum reverse voltage of 650V and a continuous forward current of 30A at case temperatures below 145°C (36A below 135°C). The diode utilizes SiC technology to provide superior switching performance compared to silicon diodes.
Key electrical characteristics include a typical forward voltage of 1.50V at 30A and 25°C, with a maximum of 1.75V. Reverse leakage current is limited to 200µA at 25°C and 600µA at 175°C. The device features zero reverse recovery time (trr = 0 ns), eliminating switching losses. It also offers a high surge current capability of 1125A non-repetitive peak (10µs pulse) and 150A for an 8.3ms half-sine pulse. The single pulse avalanche energy rating is 180mJ.
The positive temperature coefficient of forward voltage facilitates easy paralleling of multiple devices. The diode is suitable for applications such as power factor correction, switch-mode power supplies (SMPS), solar inverters, UPS systems, and general power switching circuits. The maximum junction temperature is 175°C, with a thermal resistance from junction to case of 0.58°C/W.
The FFSH3065A is offered in a TO-247-2 through-hole package (case 340CL). It is Pb-free and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $10.11 | $10.11 |
| 10+ | $6.42 | $6.42 |
| 120+ | $5.43 | $5.43 |
| 1,020+ | $5.35 | $5.35 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
30A at case temperature below 145°C, or 36A below 135°C.
1.50V at 30A and 25°C, with a maximum of 1.75V.
No, it has zero reverse recovery time (0 ns) due to SiC Schottky technology.
TO-247-2 through-hole package.
175°C.
Non-repetitive peak forward surge current is 1125A at 25°C for a 10µs pulse.