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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,700 pcs
|
2700 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Capacitance @ Vr, F | |
| Capacitance @ Vr, F (@ VR = 400 V, f = 100 kHz (inferred) | |
| Current | |
| Forward Current (IF) (Nominal @ TC < 135 °C) | |
| Forward Current (IF) (Nominal @ TC < 155 °C) | |
| Forward Voltage (VF) (Typical/Maximum @ IF = 30 A, TC = 125 °C) | |
| Forward Voltage (VF) (Typical/Maximum @ IF = 30 A, TC = 175 °C) | |
| Halogen Free | |
| Industrial Grade | |
| Junction Temperature (TJ) | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Torque | |
| Mounting Type | |
| Non-Repetitive Forward Surge Current (Half-Sine, 8.3 ms) | |
| Non-Repetitive Peak Forward Surge Current (IF,SM) (Maximum @ TC = 150 °C, 10 µs) | |
| Non-Repetitive Peak Forward Surge Current (IF,SM) (Maximum @ TC = 25 °C, 10 µs) | |
| Operating Temperature | |
| Package / Case Code | |
| Power Dissipation (Ptot) (Nominal @ TC = 150 °C) | |
| Power Dissipation (Ptot) (Nominal @ TC = 25 °C) | |
| Repetitive Forward Surge Current (Half-Sine, 8.3 ms) | |
| Reverse Current (IR) (Maximum @ VR = 1200 V, TC = 125 °C) | |
| Reverse Current (IR) (Maximum @ VR = 1200 V, TC = 175 °C) | |
| Reverse Current (IR) (Maximum @ VR = 1200 V, TC = 25 °C) | |
| Reverse Recovery Time (trr) | |
| Reverse Voltage (Vrrm) | |
| SVHC Present | |
| Single Pulse Avalanche Energy (EAS) (L = 0.5 mH, IAS = 38 A) | |
| Speed | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Thermal Resistance - Junction to Case | |
| Total Capacitive Charge (QC) (V = 800 V) | |
| Voltage |
The FFSH30120A-F155 is a Silicon Carbide (SiC) Schottky diode from onsemi's EliteSiC family. It offers a peak repetitive reverse voltage of 1200V and a continuous forward current of 30A at case temperature below 155°C (46A at TC<135°C). The diode features zero reverse recovery current, enabling high-frequency operation with minimal switching losses. It is avalanche rated at 361 mJ and can handle non-repetitive surge currents up to 1500A (10 µs pulse). The device is housed in a TO-247-2LD package (through-hole, 2 leads) and is Pb-free, Halogen-free, and RoHS compliant. Typical applications include power factor correction, solar inverters, UPS systems, and general-purpose power switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $16.89 | $16.89 |
| 10+ | $10.71 | $10.71 |
| 120+ | $9.77 | $9.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1200 V (peak repetitive reverse voltage).
30 A continuous at TC<155°C, and 46 A at TC<135°C.
Typically 1.45 V at 30 A and 25°C, maximum 1.75 V.
No, it is a SiC Schottky diode with zero reverse recovery time (0 ns).
TO-247-2LD (through-hole, 2 leads).
175°C.
Non-repetitive peak forward surge current up to 1500 A at 25°C (10 µs pulse).