| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
67,050 pcs
|
67050 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Avalanche Energy (EAS) | |
| Capacitance (Typical @ VR=300 V, f=100 kHz) | |
| Capacitance @ Vr, F | |
| Current | |
| Forward Current (Nominal @ TC < 135 °C) | |
| Forward Current (Nominal @ TC < 141 °C) | |
| Forward Voltage (Typical/Maximum @ IF=20 A, TC=125 °C) | |
| Forward Voltage (Typical/Maximum @ IF=20 A, TC=175 °C) | |
| Forward Voltage (Typical/Maximum @ IF=20 A, TC=25 °C) | |
| Halogen Free | |
| Junction Temperature (TJ) | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Maximum @ TC = 150 °C) | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Reverse Current (Typical/Maximum @ VR=650 V, TC=125 °C) | |
| Reverse Current (Typical/Maximum @ VR=650 V, TC=175 °C) | |
| Reverse Current (Typical/Maximum @ VR=650 V, TC=25 °C) | |
| Reverse Recovery Time (trr) | |
| Reverse Voltage (Vrrm) | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Surge Current (Maximum @ TC = 150 °C, 10 µs pulse) | |
| Surge Current (Maximum @ TC = 25 °C, 10 µs pulse) | |
| Surge Current (Maximum @ TC=25 °C, half-sine 8.3 ms) | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance (RθJC) | |
| Total Capacitive Charge (Qc) | |
| Voltage | |
| capacitance (Typical @ VR = 1 V, f = 100 kHz) | |
| capacitance (Typical @ VR = 600 V, f = 100 kHz) |
The FFSH2065B-F085 is a 650V, 20A Silicon Carbide (SiC) Schottky diode from onsemi's EliteSiC family. SiC Schottky technology provides superior switching performance with zero reverse recovery current, enabling higher efficiency and frequency operation in power conversion systems. The diode offers a typical forward voltage of 1.38V at 20A and 25°C, with a maximum forward voltage of 1.7V. Reverse leakage current is typically 0.5µA at 650V and 25°C. The device is avalanche rated at 94mJ and can handle non-repetitive surge currents up to 889A (10µs pulse).
Thermal performance is excellent with a maximum junction temperature of 175°C and a junction-to-case thermal resistance of 1.01°C/W. Power dissipation is rated at 148W at TC=25°C. The positive temperature coefficient of forward voltage facilitates ease of paralleling multiple diodes. The device is packaged in a through-hole TO-247-2 case, suitable for high-power PCB mounting.
The FFSH2065B-F085 is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications such as HEV-EV onboard chargers and DC-DC converters. It is also ideal for power factor correction, solar inverters, and high-frequency switching power supplies. The diode is RoHS compliant, Pb-Free, and Halogen Free/BFR Free.
| Qty | Low | High |
|---|---|---|
| 1+ | $10.34 | $10.34 |
| 10+ | $6.16 | $6.16 |
| 120+ | $5.21 | $5.21 |
| 1,020+ | $5.03 | $5.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The peak repetitive reverse voltage (VRRM) is 650V.
The continuous forward current is 20A at TC < 141°C, and 22.3A at TC < 135°C.
At 20A and 25°C, typical forward voltage is 1.38V, maximum 1.7V. At 175°C, typical is 1.72V, maximum 2.4V.
No, the reverse recovery time is 0 ns, typical of SiC Schottky diodes.
The device is in a through-hole TO-247-2 package.
The maximum junction temperature is 175°C.
Non-repetitive peak surge current is 889A (10µs pulse at 25°C) and 84A (half-sine 8.3ms at 25°C).