| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
178,713 pcs
|
178713 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Average Rectified Current (Nominal @ TC < 148 °C) | |
| Average Rectified Current (Unspecified condition) | |
| Capacitance @ Vr, F | |
| Current | |
| Forward Voltage (Typical/Maximum @ IF = 10 A, TC = 25 °C) | |
| Forward Voltage (Typical/Maximum @ IF=10 A, TC=125 °C) | |
| Forward Voltage (Typical/Maximum @ IF=10 A, TC=175 °C) | |
| Halogen Free | |
| Max Junction Temperature | |
| Mounting Type | |
| Non Repetitive Peak Forward Surge Current (Maximum @ TC = 150 °C, 10 µs) | |
| Non Repetitive Peak Forward Surge Current (Maximum @ TC = 25 °C, 10 µs) | |
| Non-Repetitive Forward Surge Current | |
| Operating Temperature | |
| Power Dissipation (Maximum @ TC = 150 °C) | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Repetitive Forward Surge Current | |
| Reverse Current (Maximum @ VR = 650 V, TC = 125 °C) | |
| Reverse Current (Maximum @ VR = 650 V, TC = 175 °C) | |
| Reverse Current (Maximum @ VR = 650 V, TC = 25 °C) | |
| Reverse Recovery Time (trr) | |
| Single Pulse Avalanche Energy (EAS) | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance Junction-to-Case (RθJC) | |
| Total Capacitive Charge (Qc) | |
| Voltage |
The FFSH2065ADN-F155 is a Silicon Carbide (SiC) Schottky diode from On Semiconductor, rated for 650V reverse voltage and 20A average forward current (per device). It is housed in a TO-247-3 through-hole package. This diode utilizes SiC technology to achieve zero reverse recovery time, significantly reducing switching losses in high-frequency circuits. The device offers a typical forward voltage of 1.5V at 25°C and 10A, with a maximum junction temperature of 175°C. It is RoHS compliant and Pb-free. The FFSH2065ADN-F155 is suitable for applications such as power factor correction, switched-mode power supplies, solar inverters, and UPS systems. Its avalanche energy rating of 64mJ provides robustness in harsh environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $9.38 | $9.38 |
| 10+ | $6.45 | $6.45 |
| 450+ | $4.40 | $4.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V maximum repetitive reverse voltage.
20A per device (10A per leg) at case temperature below 148°C.
1.5V typical at 10A and 25°C junction temperature.
No, it is a SiC Schottky diode with zero reverse recovery time (0 ns).
TO-247-3, through-hole mounting.
64 mJ single pulse avalanche energy.
175°C.