Ready to onboard?
Are you ready to join DistyParts and
grow your business?
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
14,850 pcs
|
14850 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,050 pcs
|
5050 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Avalanche Energy | |
| Continuous Forward Current | |
| Current | |
| Diode Configuration | |
| Halogen Free | |
| IFSM (Maximum @ TC=25 °C, 10 µs pulse) | |
| IFSM (Maximum @ tp=8.3 ms, TC=25 °C) | |
| IR (Maximum @ VR=1200 V, TC=125 °C) | |
| IR (Maximum @ VR=1200 V, TC=175 °C) | |
| IR (Maximum @ VR=1200 V, TC=25 °C) | |
| Mounting Torque | |
| Mounting Type | |
| Operating Temperature | |
| Operating Temperature Range | |
| Ptot (Maximum @ TC=150 °C) | |
| Ptot (Maximum @ TC=25 °C) | |
| Repetitive Forward Surge Current | |
| Repetitive Reverse Voltage | |
| RθJC (Maximum @ Per device) | |
| RθJC (Maximum @ Per leg) | |
| SVHC Present | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Total Capacitive Charge | |
| VF (Typical/Maximum @ IF=10 A, TC=125 °C) | |
| VF (Typical/Maximum @ IF=10 A, TC=175 °C) | |
| VF (Typical/Maximum @ IF=10 A, TC=25 °C) | |
| Voltage |
The FFSH20120ADN-F155 is a Silicon Carbide (SiC) Schottky diode from onsemi's EliteSiC family. It features a repetitive reverse voltage of 1200 V and a continuous forward current of 20 A per device at case temperatures below 155°C. The diode offers a typical forward voltage of 1.45 V at 10 A and 25°C, with a maximum of 1.75 V. It is avalanche rated at 100 mJ and can handle non-repetitive peak forward surge currents up to 630 A for a 10 µs pulse.
This device uses SiC Schottky technology which provides no reverse recovery current, temperature-independent switching, and excellent thermal performance. The maximum junction temperature is 175°C, and the thermal resistance from junction to case is 0.44 °C/W per device. Power dissipation is rated at 150 W at a case temperature of 25°C.
The diode is configured as a 1 pair common cathode in a through-hole TO-247-3L package. It is Pb-free, halogen free/BFR free, and RoHS compliant. Typical applications include power switching circuits, SMPS, solar inverters, and UPS systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $13.79 | $13.79 |
| 10+ | $8.33 | $8.33 |
| 120+ | $8.32 | $8.32 |
| 510+ | $7.34 | $7.34 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum repetitive reverse voltage (VRRM) is 1200 V at TC=25°C.
The maximum continuous forward current (IF) is 20 A per device at TC<155°C.
The typical forward voltage (VF) is 1.45 V at IF=10 A and TC=25°C, with a maximum of 1.75 V.
No, as a SiC Schottky diode it has no reverse recovery current.
It is available in a through-hole TO-247-3L package (TO-247-3).
The maximum junction temperature (TJ) is 175°C.
The single pulse avalanche energy (EAS) is 100 mJ maximum at starting TJ=25°C.