FFSH20120ADN-F085 Silicon Carbide Schottky diode rated for 1200V reverse voltage and 15A forward current. Packaged in a through-hole TO-247-3 case.
Mfr Part #:

FFSH20120ADN-F085

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
Silicon Carbide Schottky diode rated for 1200V reverse voltage and 15A forward current. Packaged in a through-hole TO-247-3 case.
Total Stock: 3,823 pcs
$ Price Range: $6.46 - $12.81

FFSH20120ADN-F085 Available from 1 distributor

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FFSH20120ADN-F085 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
AEC-Q101
Automotive Grade
Capacitance @ Vr, F
Current
Forward Voltage (Typical/Maximum @ IF = 10 A, TC = 25 °C)
Forward Voltage (Typical/Maximum @ IF=10 A, TC=125 °C)
Forward Voltage (Typical/Maximum @ IF=10 A, TC=175 °C)
Halogen Free
Max Junction Temperature
Mounting Torque
Mounting Type
Non-Repetitive Forward Surge Current
Non-Repetitive Peak Forward Surge Current (Maximum @ tp = 10 µs, TC = 150 °C)
Non-Repetitive Peak Forward Surge Current (Maximum @ tp = 10 µs, TC = 25 °C)
Operating Temperature
Power Dissipation (Maximum @ TC = 150 °C)
Power Dissipation (Maximum @ TC=25 °C)
Repetitive Forward Surge Current
Reverse Current (IR)
Reverse Recovery Time (trr)
SVHC Present
Single Pulse Avalanche Energy
Speed
Supplier Device Package
Tape & Reel
Technology
Thermal Resistance - Junction to Case
Voltage

FFSH20120ADN-F085 Description

Short technical summary and product information.

The FFSH20120ADN-F085 is a Silicon Carbide (SiC) Schottky diode from onsemi's EliteSiC family. It is rated for a maximum DC reverse voltage of 1200 V and a continuous forward current of 15 A (at TC < 155°C). The diode features a typical forward voltage of 1.45 V at 10 A and 25°C, with a maximum of 1.75 V. It offers zero reverse recovery time (trr = 0 ns), enabling high-frequency switching with minimal losses.

 

This device is avalanche rated at 100 mJ and can handle non-repetitive peak forward surge currents up to 630 A (10 µs pulse). It operates over a junction temperature range of -55°C to 175°C, with a maximum power dissipation of 150 W at 25°C case temperature. The thermal resistance from junction to case is 1.0 °C/W per leg and 0.44 °C/W per device.

 

The diode is housed in a through-hole TO-247-3 package and is AEC-Q101 qualified for automotive applications. It is Pb-free, halogen-free/BFR-free, and RoHS compliant.

FFSH20120ADN-F085 Quick Information

Product Type: Silicon Carbide Schottky Diode
Canonical Name: Silicon Carbide (SiC) Schottky Diode, 20 A, 1200 V, D1, TO-247-3L
Subcategory: Single Rectifier Diode

FFSH20120ADN-F085 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FFSH20120ADN-F085 Estimated Pricing

Qty Low High
1+ $12.81 $12.81
10+ $8.25 $8.25
120+ $7.41 $7.41
510+ $6.62 $6.62
1,020+ $6.46 $6.46

Estimated market price range - modelled values for guidance only, not live distributor offers.

FFSH20120ADN-F085 Features

  • 1200V reverse voltage rating.
  • 15A continuous forward current.
  • Zero reverse recovery time.
  • AEC-Q101 qualified for automotive.
  • TO-247-3 through-hole package.

FFSH20120ADN-F085 Applications

  • Automotive HEV-EV onboard chargers.
  • Automotive HEV-EV DC-DC converters.
  • High-frequency power supply designs.
  • Power factor correction circuits.

FFSH20120ADN-F085 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum reverse voltage of the FFSH20120ADN-F085?

The maximum DC reverse voltage is 1200 V.

What is the forward current rating of this diode?

The continuous forward current is 15 A at TC < 155°C.

Does this diode have reverse recovery time?

No, as a SiC Schottky diode, it has zero reverse recovery time (trr = 0 ns).

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

What package is the FFSH20120ADN-F085 available in?

It is available in a through-hole TO-247-3 package.

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