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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,846 pcs
|
3846 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Avalanche Energy | |
| Capacitance | |
| Capacitance @ Vr, F | |
| Capacitive Charge | |
| Current | |
| Forward Current (Maximum @ Tc < 158 °C) | |
| Forward Voltage (Typical/Maximum @ IF=20 A, TC=125 °C) | |
| Forward Voltage (Typical/Maximum @ IF=20 A, TC=175 °C) | |
| Forward Voltage (Typical/Maximum @ IF=20 A, TC=25 °C) | |
| Halogen Free | |
| Junction Temperature | |
| Mounting Type | |
| Non-Repetitive Forward Surge Current | |
| Non-Repetitive Peak Forward Surge Current (Maximum @ TC = 150 °C, tP = 10 µs) | |
| Non-Repetitive Peak Forward Surge Current (Maximum @ TC = 25 °C, tP = 10 µs) | |
| Operating Temperature | |
| Power Dissipation (Maximum @ TC = 150 °C) | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Repetitive Forward Surge Current | |
| Reverse Current (Maximum @ VR=1200 V, TC=125 °C) | |
| Reverse Current (Maximum @ VR=1200 V, TC=175 °C) | |
| Reverse Current (Maximum @ VR=1200 V, TC=25 °C) | |
| Reverse Recovery Time (trr) | |
| Reverse Voltage | |
| Speed | |
| Storage Temperature | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance - Junction to Case | |
| Voltage |
The FFSH20120A-F085 is a Silicon Carbide (SiC) Schottky diode from ON Semiconductor, part of the EliteSiC family. It is designed for high-efficiency power conversion applications.
Key specifications include a maximum reverse voltage of 1200 V, continuous forward current of 20 A (30 A at case temperature below 135°C), and zero reverse recovery time. The device features a low forward voltage drop of 1.45 V typical at 25°C and 20 A, and is avalanche rated at 210 mJ.
The diode is AEC-Q101 qualified for automotive applications, making it suitable for use in HEV-EV onboard chargers and DC-DC converters. It is housed in a TO-247-2 through-hole package with a maximum junction temperature of 175°C and a thermal resistance of 0.55°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $13.89 | $13.89 |
| 10+ | $8.89 | $8.89 |
| 120+ | $7.89 | $7.89 |
| 510+ | $7.28 | $7.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum repetitive reverse voltage is 1200 V.
The continuous forward current is 20 A at case temperature below 158°C, and 30 A at case temperature below 135°C.
At 20 A and 25°C, the typical forward voltage is 1.45 V (max 1.75 V). At 125°C, typical is 1.7 V (max 2.0 V). At 175°C, typical is 2.0 V (max 2.4 V).
The reverse recovery time is 0 ns, as it is a SiC Schottky diode with no reverse recovery.
The device is available in a TO-247-2 through-hole package.
The operating temperature range is -55°C to 175°C.
The single pulse avalanche energy is 210 mJ at starting junction temperature of 25°C.