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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,846 pcs
|
3846 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
450 pcs
|
450 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Avalanche Energy | |
| Capacitance (Typical @ VR = 800 V, f = 100 kHz) | |
| Capacitance @ Vr, F | |
| Continuous Forward Current (Maximum @ TC < 153 °C) | |
| Current | |
| Forward Voltage (Typical/Maximum @ IF=20 A, TC=125 °C) | |
| Forward Voltage (Typical/Maximum @ IF=20 A, TC=175 °C) | |
| Halogen Free | |
| Industrial Grade | |
| Lead Style | |
| MSL (Moisture Sensitivity Level) | |
| Max Junction Temperature | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Non-Repetitive Forward Surge Current | |
| Non-Repetitive Peak Forward Surge Current (Maximum @ tp = 10 µs, TC = 150 °C) | |
| Non-Repetitive Peak Forward Surge Current (Maximum @ tp = 10 µs, TC = 25 °C) | |
| Number of Pins | |
| Operating Temperature Range | |
| Power Dissipation (Maximum @ TC = 150 °C) | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Repetitive Forward Surge Current | |
| Reverse Current (Maximum @ VR=1200 V, TC=125 °C) | |
| Reverse Current (Maximum @ VR=1200 V, TC=175 °C) | |
| Reverse Current (Maximum @ VR=1200 V, TC=25 °C) | |
| Reverse Recovery Time (trr) | |
| Reverse Voltage (Vrrm) | |
| SVHC Present | |
| Speed | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance - Junction to Case | |
| Total Capacitive Charge | |
| Voltage | |
| capacitance (Typical @ VR = 400 V, f = 100 kHz) |
The FFSH20120A is a Silicon Carbide (SiC) Schottky diode from On Semiconductor's EliteSiC family. It is rated for a maximum repetitive reverse voltage of 1200V and a continuous forward current of 30A at case temperatures below 135°C (20A at TC<153°C). The diode offers zero reverse recovery time (trr = 0 ns), enabling high-frequency switching with minimal losses.
Key electrical characteristics include a forward voltage of 1.45V typical (1.75V max) at 20A and 25°C, and a maximum reverse current of 200 µA at 1200V and 25°C. The device is avalanche rated at 200 mJ (single pulse) and can handle non-repetitive surge currents up to 1190A (10 µs pulse). Maximum power dissipation is 273W at TC=25°C.
The diode is housed in a TO-247-2 through-hole package with two pins (cathode and anode). It operates over a junction temperature range of -55°C to 175°C, with a thermal resistance (junction-to-case) of 0.55°C/W. The part is Pb-free, Halogen Free/BFR Free, and RoHS compliant.
Typical applications include power factor correction (PFC), switch-mode power supplies (SMPS), solar inverters, UPS systems, and general power switching circuits. The SiC technology provides superior switching performance, higher efficiency, and reduced system size compared to silicon diodes.
| Qty | Low | High |
|---|---|---|
| 1+ | $14.90 | $14.90 |
| 10+ | $11.35 | $11.35 |
| 100+ | $9.46 | $9.46 |
| 450+ | $8.42 | $8.42 |
| 900+ | $7.87 | $7.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum repetitive reverse voltage is 1200V.
30A at case temperature below 135°C, and 20A at case temperature below 153°C.
No, the reverse recovery time is 0 ns (zero recovery).
Typical 1.45V, maximum 1.75V at IF=20A, TC=25°C.
Through-hole TO-247-2 package with 2 pins.
175°C.
Yes, the datasheet states it is Pb-Free, Halogen Free/BFR Free and RoHS Compliant.