FFSH20120A FFSH20120A is a 1200V, 30A Silicon Carbide Schottky diode from On Semiconductor in a TO-247-2 through-hole package. It features zero reverse recovery time and 200 mJ avalanche energy rating.
Mfr Part #:

FFSH20120A

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
FFSH20120A is a 1200V, 30A Silicon Carbide Schottky diode from On Semiconductor in a TO-247-2 through-hole package. It features zero reverse recovery time and 200 mJ avalanche energy rating.
Total Stock: 4,296 pcs
$ Price Range: $7.87 - $14.90

FFSH20120A Available from 2 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,846 pcs
3846 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
450 pcs
450 pcs On Request 1 On Request On Request On Request On Request On Request

FFSH20120A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Avalanche Energy
Capacitance (Typical @ VR = 800 V, f = 100 kHz)
Capacitance @ Vr, F
Continuous Forward Current (Maximum @ TC < 153 °C)
Current
Forward Voltage (Typical/Maximum @ IF=20 A, TC=125 °C)
Forward Voltage (Typical/Maximum @ IF=20 A, TC=175 °C)
Halogen Free
Industrial Grade
Lead Style
MSL (Moisture Sensitivity Level)
Max Junction Temperature
Medical Grade
Military Grade
Mounting Type
Non-Repetitive Forward Surge Current
Non-Repetitive Peak Forward Surge Current (Maximum @ tp = 10 µs, TC = 150 °C)
Non-Repetitive Peak Forward Surge Current (Maximum @ tp = 10 µs, TC = 25 °C)
Number of Pins
Operating Temperature Range
Power Dissipation (Maximum @ TC = 150 °C)
Power Dissipation (Maximum @ TC=25 °C)
Repetitive Forward Surge Current
Reverse Current (Maximum @ VR=1200 V, TC=125 °C)
Reverse Current (Maximum @ VR=1200 V, TC=175 °C)
Reverse Current (Maximum @ VR=1200 V, TC=25 °C)
Reverse Recovery Time (trr)
Reverse Voltage (Vrrm)
SVHC Present
Speed
Supplier Device Package
Tape & Reel
Technology
Thermal Resistance - Junction to Case
Total Capacitive Charge
Voltage
capacitance (Typical @ VR = 400 V, f = 100 kHz)

FFSH20120A Description

Short technical summary and product information.

The FFSH20120A is a Silicon Carbide (SiC) Schottky diode from On Semiconductor's EliteSiC family. It is rated for a maximum repetitive reverse voltage of 1200V and a continuous forward current of 30A at case temperatures below 135°C (20A at TC<153°C). The diode offers zero reverse recovery time (trr = 0 ns), enabling high-frequency switching with minimal losses.

 

Key electrical characteristics include a forward voltage of 1.45V typical (1.75V max) at 20A and 25°C, and a maximum reverse current of 200 µA at 1200V and 25°C. The device is avalanche rated at 200 mJ (single pulse) and can handle non-repetitive surge currents up to 1190A (10 µs pulse). Maximum power dissipation is 273W at TC=25°C.

 

The diode is housed in a TO-247-2 through-hole package with two pins (cathode and anode). It operates over a junction temperature range of -55°C to 175°C, with a thermal resistance (junction-to-case) of 0.55°C/W. The part is Pb-free, Halogen Free/BFR Free, and RoHS compliant.

 

Typical applications include power factor correction (PFC), switch-mode power supplies (SMPS), solar inverters, UPS systems, and general power switching circuits. The SiC technology provides superior switching performance, higher efficiency, and reduced system size compared to silicon diodes.

FFSH20120A Quick Information

Product Type: Silicon Carbide Schottky Diode
Series: EliteSiC
Canonical Name: FFSH20120A Silicon Carbide Schottky Diode, 20A/30A, 1200V, TO-247-2
Subcategory: Rectifier Diode

FFSH20120A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FFSH20120A Estimated Pricing

Qty Low High
1+ $14.90 $14.90
10+ $11.35 $11.35
100+ $9.46 $9.46
450+ $8.42 $8.42
900+ $7.87 $7.87

Estimated market price range - modelled values for guidance only, not live distributor offers.

FFSH20120A Features

  • Zero reverse recovery time (trr = 0 ns).
  • Rated for 1200V reverse voltage and 30A forward current.
  • Avalanche energy rating of 200 mJ (single pulse).
  • Max junction temperature of 175°C.
  • Pb-free, Halogen Free, and RoHS compliant.

FFSH20120A Applications

  • Used in power factor correction (PFC) circuits.
  • Ideal for switch-mode power supplies (SMPS).
  • Suitable for solar inverter and UPS systems.
  • Designed for high-frequency power switching circuits.

FFSH20120A FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum reverse voltage (VRRM) of the FFSH20120A?

The maximum repetitive reverse voltage is 1200V.

What is the continuous forward current rating?

30A at case temperature below 135°C, and 20A at case temperature below 153°C.

Does this diode have reverse recovery time?

No, the reverse recovery time is 0 ns (zero recovery).

What is the forward voltage at 20A and 25°C?

Typical 1.45V, maximum 1.75V at IF=20A, TC=25°C.

What package is the FFSH20120A available in?

Through-hole TO-247-2 package with 2 pins.

What is the maximum junction temperature?

175°C.

Is the FFSH20120A RoHS compliant?

Yes, the datasheet states it is Pb-Free, Halogen Free/BFR Free and RoHS Compliant.

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