Ready to onboard?
Are you ready to join DistyParts and
grow your business?
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
420 pcs
|
420 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance @ Vr, F | |
| Current | |
| IF (Maximum @ TC < 152 °C) | |
| IF (Maximum @ TC=135 °C) | |
| IFSM (Maximum @ Half-Sine Pulse, tp=8.3 ms) | |
| IFSM (Maximum @ TC=150 °C, 10 μs) | |
| IFSM (Maximum @ TC=25 °C, 10 μs) | |
| IR (Maximum @ VR=650 V, TC=125 °C) | |
| IR (Maximum @ VR=650 V, TC=175 °C) | |
| IR (Maximum @ VR=650 V, TC=25 °C) | |
| Max Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Operating and Storage Temperature Range | |
| Peak Repetitive Reverse Voltage | |
| Ptot (Maximum @ TC=150 °C) | |
| Ptot (Maximum @ TC=25 °C) | |
| Repetitive Forward Surge Current | |
| Reverse Recovery Time (trr) | |
| Shipping | |
| Single Pulse Avalanche Energy | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance - Junction to Case | |
| Total Capacitive Charge | |
| VF (Typical/Maximum @ IF=16 A, TC=125 °C) | |
| VF (Typical/Maximum @ IF=16 A, TC=175 °C) | |
| VF (Typical/Maximum @ IF=16 A, TC=25 °C) | |
| Voltage |
The FFSH1665A from ON Semiconductor is a 650V, 16A Silicon Carbide (SiC) Schottky diode designed for high-efficiency power conversion. This EliteSiC series diode utilizes SiC technology to provide superior switching performance with zero reverse recovery current, enabling higher operating frequencies and reduced EMI. The device is avalanche rated at 81 mJ and offers high surge current capability up to 1000 A (10 μs pulse).
Key electrical specifications include a maximum junction temperature of 175°C, typical forward voltage of 1.5 V at 16 A (25°C), and a low thermal resistance of 0.93°C/W junction-to-case. The diode is capable of continuous forward current up to 16 A at case temperatures below 152°C, and up to 23 A below 135°C.
This diode is suitable for use in power factor correction, solar inverters, UPS systems, and high-frequency switching power supplies. The through-hole TO-247-2 package allows for easy mounting and efficient heat dissipation. The device is RoHS compliant and Pb-free.
| Qty | Low | High |
|---|---|---|
| 68+ | $4.39 | $4.39 |
| 450+ | $3.34 | $3.34 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The peak repetitive reverse voltage (VRRM) is 650 V.
The continuous rectified forward current (IF) is 16 A at case temperature below 152°C, and 23 A below 135°C.
Typical forward voltage is 1.5 V at 16 A, 25°C; maximum is 1.75 V at 25°C.
No, it has zero reverse recovery time (trr = 0 ns) due to SiC Schottky technology.
It is available in a TO-247-2 through-hole package.
The maximum junction temperature (TJ) is 175°C.
The thermal resistance junction-to-case (RθJC) is 0.93°C/W maximum.