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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,850 pcs
|
5850 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Capacitance | |
| Capacitance @ Vr, F | |
| Current | |
| Halogen Free | |
| If Continuous Per Device (Nominal @ TC < 135 °C) | |
| If Continuous Per Device (Nominal @ TC < 145 °C) | |
| If Continuous Per Leg (Nominal @ TC < 145 °C) | |
| Max Junction Temperature | |
| Mounting Torque | |
| Mounting Type | |
| Operating Temperature | |
| Ptot (Maximum @ TC=150 °C) | |
| Ptot (Maximum @ TC=25 °C) | |
| Reverse Recovery Time (trr) | |
| Single Pulse Avalanche Energy | |
| Speed | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Voltage | |
| Voltage - Reverse (Vrrm) | |
| ifsm (Nominal @ TC=150 °C, tp=10 µs) | |
| ifsm (Nominal @ TC=25 °C, half-sine pulse, tp=8.3 ms) | |
| ifsm (Nominal @ TC=25 °C, tp=10 µs) | |
| ir (Typical/Maximum @ VR=650 V, TC=125 °C) | |
| ir (Typical/Maximum @ VR=650 V, TC=175 °C) | |
| ir (Typical/Maximum @ VR=650 V, TC=25 °C) | |
| rthjc (Maximum @ Per Device) | |
| rthjc (Maximum @ Per Leg) | |
| vf (Typical/Maximum @ IF=6 A, TC=125 °C) | |
| vf (Typical/Maximum @ IF=6 A, TC=175 °C) | |
| vf (Typical/Maximum @ IF=6 A, TC=25 °C) |
The FFSH1265BDN-F085 from On Semiconductor is a Silicon Carbide (SiC) Schottky diode rated at 650V reverse voltage and 12A continuous forward current (per device at TC < 145°C). It utilizes SiC technology to deliver superior switching performance with no reverse recovery current, resulting in higher efficiency, reduced EMI, and increased power density in power conversion circuits.
Key electrical characteristics include a typical forward voltage of 1.38V at 25°C and 6A, near-zero reverse recovery time (0 ns), and a low typical reverse leakage current of 0.025 µA at 25°C. The diode can handle non-repetitive peak forward surge currents up to 510 A (10 µs pulse) and offers an avalanche energy rating of 24.5 mJ. Thermal performance is supported by a maximum junction temperature of 175°C and a junction-to-case thermal resistance of 1.5 °C/W per device.
The device is housed in a TO-247-3 through-hole package with a dual-anode configuration. It is mounted with M3 screws at 60 Ncm torque. The FFSH1265BDN-F085 is RoHS compliant, lead-free, halogen-free, and AEC-Q101 qualified, making it suitable for demanding automotive and industrial power applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $7.85 | $7.85 |
| 10+ | $4.88 | $4.88 |
| 120+ | $4.05 | $4.05 |
| 510+ | $3.79 | $3.79 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum repetitive reverse voltage (VRRM) is 650 V.
The continuous forward current is 12 A per device at TC < 145°C, or 14.4 A at TC < 135°C. Per leg, it is 6 A at TC < 145°C and 7.2 A at TC < 135°C.
At 6 A and 25°C, the typical forward voltage is 1.38 V with a maximum of 1.7 V. At 175°C, typical is 1.67 V, maximum 2.4 V.
No, the FFSH1265BDN-F085 has zero reverse recovery time (0 ns) due to its SiC Schottky technology.
It is housed in a TO-247-3 through-hole package.
The maximum junction temperature (Tj max) is 175 °C.
Yes, the FFSH1265BDN-F085 is AEC-Q101 qualified for automotive applications.