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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,900 pcs
|
9900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,602 pcs
|
1602 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Avalanche Energy (EAS) | |
| Average Forward Current (Maximum @ TC < 142 °C) | |
| Capacitance @ Vr, F | |
| Current | |
| Forward Voltage (Typical/Maximum @ IF = 10 A, TC = 25 °C) | |
| Forward Voltage (Typical/Maximum @ IF=10 A, TC=125 °C) | |
| Forward Voltage (Typical/Maximum @ IF=10 A, TC=175 °C) | |
| Halogen Free | |
| Junction Temperature (TJ) | |
| Mounting Torque (M3 Screw) | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Maximum @ TC = 150 °C) | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Reverse Current (Typical/Maximum @ VR=650 V, TC=125 °C) | |
| Reverse Current (Typical/Maximum @ VR=650 V, TC=175 °C) | |
| Reverse Current (Typical/Maximum @ VR=650 V, TC=25 °C) | |
| Reverse Recovery Time (trr) | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Surge Current (Maximum @ tp = 10 µs, TC = 150 °C) | |
| Surge Current (Maximum @ tp = 10 µs, TC = 25 °C) | |
| Surge Current (Maximum @ tp = 8.3 ms, TC = 25 °C) | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance Junction-to-Case (RθJC) | |
| Total Capacitive Charge (Qc) | |
| Voltage | |
| capacitance (Typical @ VR = 200 V, f = 100 kHz) | |
| capacitance (Typical @ VR = 400 V, f = 100 kHz) |
The FFSH1065B-F085 is a Silicon Carbide (SiC) Schottky diode from On Semiconductor, offering a maximum reverse voltage of 650 V and average forward current of 10 A (11.5 A at reduced case temperature). This technology provides superior switching performance with no reverse recovery current, enabling high-frequency operation and improved efficiency. Key features include a maximum junction temperature of 175°C, avalanche energy rating of 51 mJ, high surge current capability (600 A peak for 10 µs), and positive temperature coefficient for ease of paralleling. The diode is AEC-Q101 qualified and RoHS compliant, with Pb-free and halogen-free construction. It is packaged in a TO-247-2 through-hole package, suitable for automotive HEV-EV onboard chargers, DC-DC converters, and other high-efficiency power systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $10.25 | $10.25 |
| 10+ | $6.08 | $6.08 |
| 120+ | $5.51 | $5.51 |
| 510+ | $5.44 | $5.44 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650 V.
10 A at case temperature below 142°C, and 11.5 A at case temperature below 135°C.
Typical 1.5 V at 25°C, 1.7 V at 125°C, and 2.0 V at 175°C.
Zero reverse recovery time (no reverse recovery) due to SiC Schottky technology.
TO-247-2 (through-hole).
-55°C to 175°C.
600 A for 10 µs pulse at 25°C, and 42 A for 8.3 ms half-sine pulse.