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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
135 pcs
|
135 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Avalanche Energy | |
| Capacitance @ Vr, F | |
| Capacitive Charge (V=800V) | |
| Continuous Forward Current (Maximum @ TC < 158 °C) | |
| Current | |
| Forward Voltage (Typical/Maximum @ IF=10 A, TC=125 °C) | |
| Forward Voltage (Typical/Maximum @ IF=10 A, TC=175 °C) | |
| Halogen Free | |
| Max Junction Temperature | |
| Maximum Repetitive Reverse Voltage | |
| Mounting Torque | |
| Mounting Type | |
| Non-Repetitive Forward Surge Current (tp=8.3ms, half-sine) | |
| Operating Temperature | |
| Package Style | |
| Power Dissipation (Maximum @ TC = 150 °C) | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Repetitive Forward Surge Current (tp=8.3ms, half-sine) | |
| Reverse Leakage Current (Maximum @ VR=1200 V, TC=125 °C) | |
| Reverse Leakage Current (Maximum @ VR=1200 V, TC=175 °C) | |
| Reverse Leakage Current (Maximum @ VR=1200 V, TC=25 °C) | |
| Reverse Recovery Time (trr) | |
| SVHC Present | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance - Junction to Case | |
| Voltage |
The FFSH10120A-F155 is a Silicon Carbide (SiC) Schottky diode from On Semiconductor's EliteSiC family. It utilizes advanced SiC technology to deliver superior switching performance with no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance. This enables higher efficiency, faster operating frequencies, increased power density, and reduced EMI in power systems.
Key electrical specifications include a continuous forward current of 10A at case temperatures below 158°C (17A below 135°C), a maximum repetitive reverse voltage of 1200V, and a typical forward voltage of 1.45V at 10A and 25°C. The diode features zero reverse recovery time (0 ns), is avalanche rated at 100 mJ, and can handle non-repetitive surge currents up to 90A (8.3 ms half-sine).
The device is housed in a TO-247-2 through-hole package with a maximum junction temperature of 175°C and a thermal resistance of 0.78°C/W from junction to case. Power dissipation is rated at 193W at 25°C case temperature. The positive temperature coefficient of forward voltage facilitates easy paralleling of multiple devices.
Typical applications include power factor correction (PFC) circuits, solar inverters, uninterruptible power supplies (UPS), and general-purpose power switching circuits. The diode is RoHS compliant, Pb-Free, and Halogen Free/BFR Free.
| Qty | Low | High |
|---|---|---|
| 1+ | $9.94 | $9.94 |
| 10+ | $5.84 | $5.84 |
| 100+ | $4.95 | $4.95 |
| 450+ | $4.94 | $4.94 |
| 900+ | $4.79 | $4.79 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1200 V.
10 A at case temperature below 158°C, 17 A below 135°C.
Typically 1.45 V at 10 A and 25°C, maximum 1.75 V.
0 ns (no recovery time).
TO-247-2 (through-hole).
175°C.
Yes, 100 mJ single pulse avalanche energy.