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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
17,550 pcs
|
17550 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Capacitance @ Vr, F | |
| Continuous Forward Current @ TC < 158°C | |
| Current | |
| Forward Voltage (Typical/Maximum @ IF = 10 A, TC = 25 °C) | |
| Forward Voltage (Typical/Maximum @ IF=10 A, TC=125 °C) | |
| Forward Voltage (Typical/Maximum @ IF=10 A, TC=175 °C) | |
| Halogen Free | |
| Max Junction Temperature | |
| Mounting Type | |
| Non-Repetitive Forward Surge Current Half-Sine Pulse, tp=8.3 ms | |
| Non-Repetitive Peak Forward Surge Current (@ TC = 25 °C, 10 µs) | |
| Operating Temperature | |
| Peak Repetitive Reverse Voltage | |
| Power Dissipation (Maximum @ TC = 150 °C) | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Repetitive Forward Surge Current Half-Sine Pulse, tp=8.3 ms | |
| Reverse Current (Maximum @ VR=1200 V, TC=125 °C) | |
| Reverse Current (Maximum @ VR=1200 V, TC=175 °C) | |
| Reverse Current (Maximum @ VR=1200 V, TC=25 °C) | |
| Reverse Recovery Time (trr) | |
| SVHC Present | |
| Single Pulse Avalanche Energy | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance - Junction to Case | |
| Total Capacitive Charge @ V=800V | |
| Voltage |
The FFSH10120A-F085 is a Silicon Carbide (SiC) Schottky Diode manufactured by ON Semiconductor. It is rated for a peak repetitive reverse voltage of 1200V and a continuous forward current of 10A at case temperatures below 158°C, with an average rectified current of 17A at lower temperatures. The diode offers zero reverse recovery time (trr = 0 ns), enabling high-frequency switching with minimal losses.
Key specifications include a non-repetitive peak forward surge current of 850A at 25°C (10 µs pulse) and 90A for an 8.3 ms half-sine pulse. The forward voltage is typically 1.45V at 10A and 25°C, rising to 2.0V at 175°C. The device has a maximum junction temperature of 175°C and a thermal resistance of 0.78°C/W from junction to case. It is avalanche rated at 100 mJ.
The diode is housed in a TO-247-2 package with through-hole mounting. The package is Pb-free, Halogen Free/BFR Free, and RoHS compliant. The device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.
Typical applications include automotive HEV/EV onboard chargers and DC-DC converters, where high efficiency and reliability are critical. The SiC technology provides superior switching performance and higher reliability compared to silicon diodes.
| Qty | Low | High |
|---|---|---|
| 1+ | $10.09 | $10.09 |
| 10+ | $5.94 | $5.94 |
| 120+ | $4.98 | $4.98 |
| 510+ | $4.82 | $4.82 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The peak repetitive reverse voltage (VRRM) is 1200V.
The continuous forward current is 10A at case temperatures below 158°C, and the average rectified current is 17A at case temperatures below 135°C.
At 10A and 25°C, the forward voltage is typically 1.45V and maximum 1.75V. At 175°C, it is typically 2.0V and maximum 2.4V.
The reverse recovery time is 0 ns, meaning there is no reverse recovery current.
The diode is available in a TO-247-2 through-hole package.
The maximum junction temperature is 175°C.
Yes, it is AEC-Q101 qualified and PPAP capable.