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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,150 pcs
|
3150 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Capacitance @ Vr, F | |
| Continuous Forward Current (Maximum @ TC < 158 °C) | |
| Current | |
| Forward Voltage (Typical/Maximum @ IF=10 A, TC=125 °C) | |
| Forward Voltage (Typical/Maximum @ IF=10 A, TC=175 °C) | |
| Halogen Free | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Non-Repetitive Forward Surge Current (tp=8.3ms, half-sine) | |
| Non-Repetitive Peak Forward Surge Current @ tP = 10 µs, TC = 25 °C | |
| Number of Pins | |
| Operating Temperature | |
| Peak Repetitive Reverse Voltage | |
| Power Dissipation (Maximum @ TC = 150 °C) | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Repetitive Forward Surge Current (tp=8.3ms, half-sine) | |
| Reverse Current (Maximum @ VR=1200 V, TC=125 °C) | |
| Reverse Current (Maximum @ VR=1200 V, TC=175 °C) | |
| Reverse Current (Maximum @ VR=1200 V, TC=25 °C) | |
| Reverse Recovery Time (trr) | |
| Single Pulse Avalanche Energy | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance - Junction to Case | |
| Total Capacitive Charge @ V=800V | |
| Voltage |
The FFSH10120A is a Silicon Carbide (SiC) Schottky diode manufactured by ON Semiconductor. It is rated for a peak repetitive reverse voltage of 1200V and a continuous forward current of 10A at case temperature below 158°C, or 17A below 135°C. The diode features a typical forward voltage of 1.45V at 10A and 25°C, and a maximum reverse current of 200µA at 1200V and 25°C.
This SiC Schottky diode offers zero reverse recovery time (trr = 0 ns), enabling high-frequency switching with minimal losses. It has a non-repetitive peak forward surge current rating of 850A (10µs pulse) and 90A (8.3ms half-sine). The device is avalanche rated at 100 mJ and has a total capacitive charge of 62 nC at 800V. Maximum power dissipation is 193W at 25°C case temperature.
The diode is housed in a through-hole TO-247-2 package with two pins (cathode and anode). It operates over a junction temperature range of -55°C to 175°C. The device is Pb-free, halogen-free, and RoHS compliant. It is suitable for applications such as power factor correction, solar inverters, UPS, and general power switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $9.08 | $9.08 |
| 10+ | $5.30 | $5.30 |
| 120+ | $4.46 | $4.46 |
| 510+ | $4.19 | $4.19 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The peak repetitive reverse voltage is 1200V.
The continuous forward current is 10A at case temperature below 158°C, and 17A below 135°C.
At 10A and 25°C, the typical forward voltage is 1.45V (maximum 1.75V). At 125°C, typical is 1.7V (max 2.0V). At 175°C, typical is 2.0V (max 2.4V).
No, it has zero reverse recovery time (trr = 0 ns) due to SiC Schottky technology.
It is available in a through-hole TO-247-2 package.
Non-repetitive peak forward surge current is 850A for a 10µs pulse, and 90A for an 8.3ms half-sine pulse.