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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,100 pcs
|
3100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance (Typical @ VR=300 V, f=100 kHz) | |
| Capacitance @ Vr, F | |
| Current | |
| Forward Current (Maximum @ TC<150 °C) | |
| Forward Current (Maximum @ TC=135 °C) | |
| Forward Voltage (Typical/Maximum @ IF = 10 A, TC = 25 °C) | |
| Forward Voltage (Typical/Maximum @ IF=10 A, TC=125 °C) | |
| Forward Voltage (Typical/Maximum @ IF=10 A, TC=175 °C) | |
| Halogen Free | |
| Max Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Operating and Storage Temperature Range | |
| Peak Repetitive Reverse Voltage | |
| Power Dissipation (Maximum @ TC = 150 °C) | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Reverse Current (Typical/Maximum @ VR=650 V, TC=125 °C) | |
| Reverse Current (Typical/Maximum @ VR=650 V, TC=175 °C) | |
| Reverse Current (Typical/Maximum @ VR=650 V, TC=25 °C) | |
| Reverse Recovery Time (trr) | |
| SVHC Present | |
| Single Pulse Avalanche Energy | |
| Speed | |
| Supplier Device Package | |
| Surge Current (Maximum @ TC = 150 °C, 10 µs) | |
| Surge Current (Maximum @ TC = 25 °C, 10 µs) | |
| Surge Current (Maximum @ TC = 25 °C, Half-Sine Pulse, tp = 8.3 ms) | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance - Junction to Case | |
| Total Capacitive Charge @ 400 V | |
| Voltage | |
| capacitance (Typical @ VR = 1 V, f = 100 kHz) | |
| capacitance (Typical @ VR = 600 V, f = 100 kHz) |
The FFSD1065B is a 650V, 13.5A Silicon Carbide (SiC) Schottky diode from On Semiconductor's EliteSiC family. It offers zero reverse recovery time and temperature-independent switching, enabling high efficiency and reduced EMI in power conversion circuits.
Key electrical specifications include a maximum forward voltage of 1.7V at 10A and 25°C, a typical reverse current of 0.5µA at 650V, and a maximum junction temperature of 175°C. The device is avalanche rated at 49mJ and can handle non-repetitive surge currents up to 650A for 10µs.
The diode is housed in a TO-252-3 (DPAK) surface-mount package and is Pb-free, Halogen-free, and RoHS compliant. It is suitable for applications such as SMPS, solar inverters, UPS, and general power switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.30 | $3.30 |
| 10+ | $2.14 | $2.14 |
| 100+ | $1.48 | $1.48 |
| 500+ | $1.22 | $1.22 |
| 1,000+ | $1.15 | $1.15 |
| 2,500+ | $1.04 | $1.04 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum repetitive reverse voltage is 650V.
13.5A at case temperature below 135°C, and 10A at case temperature below 150°C.
No, the FFSD1065B is a SiC Schottky diode with zero reverse recovery time.
The diode is available in a TO-252-3 (DPAK) surface-mount package.
The maximum junction temperature is 175°C.
Yes, the device is Pb-free, Halogen-free, and RoHS compliant.