| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
187,500 pcs
|
187500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance @ Vr, F | |
| Continuous Forward Current (Maximum @ TC < 158 °C) | |
| Current | |
| Forward Voltage (Typical/Maximum @ IF=10 A, TC=125 °C) | |
| Forward Voltage (Typical/Maximum @ IF=10 A, TC=175 °C) | |
| Halogen Free | |
| Maximum Junction Temperature | |
| Mounting Type | |
| Non-Repetitive Forward Surge Current (8.3 ms half-sine) | |
| Non-Repetitive Peak Forward Surge Current (Maximum @ tp = 10 µs, TC = 150 °C) | |
| Non-Repetitive Peak Forward Surge Current (Maximum @ tp = 10 µs, TC = 25 °C) | |
| Operating Temperature | |
| Peak Repetitive Reverse Voltage | |
| Power Dissipation (Maximum @ TC = 150 °C) | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Repetitive Forward Surge Current | |
| Reverse Current (Maximum @ VR = 650 V, TC = 125 °C) | |
| Reverse Current (Maximum @ VR = 650 V, TC = 175 °C) | |
| Reverse Current (Maximum @ VR = 650 V, TC = 25 °C) | |
| Reverse Recovery Time (trr) | |
| Single Pulse Avalanche Energy | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance - Junction to Case | |
| Total Capacitive Charge | |
| Voltage | |
| capacitance (Typical @ VR = 200 V, f = 100 kHz) | |
| capacitance (Typical @ VR = 400 V, f = 100 kHz) |
The FFSD1065A is a 650V, 18A Silicon Carbide (SiC) Schottky diode from On Semiconductor's EliteSiC family, housed in a D-PAK (TO-252) surface mount package. SiC technology provides superior switching performance with no reverse recovery current, enabling higher efficiency and reduced EMI. Rated for a maximum junction temperature of 175°C, the device features 760A non-repetitive peak forward surge current at 25°C and an avalanche energy rating of 64 mJ. Typical forward voltage is 1.5V at 10A and 25°C.
Designed for power switching circuits, this diode is suitable for applications such as SMPS, solar inverters, and UPS systems. The positive temperature coefficient facilitates easy paralleling. Thermal resistance from junction to case is 1.0°C/W, allowing for effective heat dissipation.
The FFSD1065A is Pb-free, halogen free/BFR free, and RoHS compliant. It is available in tape and reel, cut tape, or Digi-Reel packaging options for automated assembly.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.85 | $4.85 |
| 10+ | $3.21 | $3.21 |
| 100+ | $2.27 | $2.27 |
| 500+ | $1.91 | $1.91 |
| 1,000+ | $1.82 | $1.82 |
| 2,500+ | $1.81 | $1.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The peak repetitive reverse voltage is 650 V.
The continuous forward current is 18 A at TC < 135°C.
No, the FFSD1065A has zero reverse recovery time (trr = 0 ns), typical for SiC Schottky diodes.
It comes in TO-252-3 (DPak) surface mount package.
The typical forward voltage is 1.5 V, with a maximum of 1.75 V at 10 A and 25°C.
The maximum junction temperature is 175°C.