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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
40,000 pcs
|
40000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,100 pcs
|
1100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance @ Vr, F | |
| Ctot (Typical @ VR = 200 V, f = 100 kHz) | |
| Ctot (Typical @ VR = 400 V, f = 100 kHz) | |
| Current | |
| Halogen Free | |
| IF (Nominal @ TC < 135 °C) | |
| IF (Nominal @ TC < 153 °C) | |
| IFM (Nominal @ TC = 150 °C, tP = 10 µs) | |
| IFM (Nominal @ TC = 25 °C, tP = 10 µs) | |
| IR (Typical/Maximum @ VR = 650 V, TJ = 125 °C) | |
| IR (Typical/Maximum @ VR=650 V, Tj=175 °C) | |
| IR (Typical/Maximum @ VR=650 V, Tj=25 °C) | |
| Maximum Junction Temperature | |
| Mounting Type | |
| Non-Repetitive Forward Surge Current | |
| Operating Temperature | |
| Peak Repetitive Reverse Voltage | |
| Ptot (Nominal @ TC=150 °C) | |
| Ptot (Nominal @ TC=25 °C) | |
| Reverse Recovery Time (trr) | |
| SVHC Present | |
| Single Pulse Avalanche Energy | |
| Speed | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance - Junction to Case | |
| Total Capacitive Charge | |
| VF (Typical/Maximum @ IF = 8 A, TJ = 125 °C) | |
| VF (Typical/Maximum @ IF = 8 A, Tj = 175 °C) | |
| Voltage |
The FFSD0865B is a Silicon Carbide (SiC) Schottky diode from ON Semiconductor's EliteSiC family. It offers a peak repetitive reverse voltage of 650 V and a continuous forward current of 8 A at case temperature below 153 °C, increasing to 11.6 A for case temperatures below 135 °C.
Key electrical characteristics include a typical forward voltage of 1.39 V at 8 A and 25 °C, with maximum 1.7 V. The device features zero reverse recovery time, typical total capacitive charge of 22 nC at 400 V, and a 33 mJ single pulse avalanche energy rating. Maximum junction temperature is 175 °C, with thermal resistance junction-to-case of 1.64 °C/W.
This diode is designed for high efficiency power switching applications. It comes in a surface mount TO-252-3 (DPak) package, is Pb-free, Halogen Free/BFR Free, and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.50 | $2.50 |
| 10+ | $1.85 | $1.85 |
| 100+ | $1.48 | $1.48 |
| 500+ | $1.32 | $1.32 |
| 1,000+ | $1.21 | $1.21 |
| 2,500+ | $1.13 | $1.13 |
| 5,000+ | $1.07 | $1.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The FFSD0865B has a peak repetitive reverse voltage (VRRM) of 650 V.
Continuous rectified forward current (IF) is 8 A at case temperature below 153 °C, and 11.6 A at case temperature below 135 °C.
At 8 A and 25 °C junction temperature, typical forward voltage is 1.39 V, maximum 1.7 V.
The FFSD0865B has a zero reverse recovery time (0 ns), as it is a SiC Schottky diode.
The FFSD0865B is offered in a surface mount TO-252-3 (DPak) package, also known as D-PAK (TO-252).