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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
697 pcs
|
697 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance (Typical @ VR = 800 V, f = 100 kHz) | |
| Capacitance @ Vr, F | |
| Current | |
| Forward Current (Continuous) (Nominal @ TC < 168 °C) | |
| Forward Voltage (Minimum/Typical/Maximum @ IF = 8 A, TC = 125 °C) | |
| Forward Voltage (Minimum/Typical/Maximum @ IF = 8 A, TC = 175 °C) | |
| Halogen Free | |
| Industrial Grade | |
| Junction Temperature Range | |
| Mounting Type | |
| Operating Temperature | |
| Peak Forward Surge Current (Maximum @ Half-Sine Pulse, tp = 8.3 ms, TC = 25 °C) | |
| Peak Forward Surge Current (Maximum @ TC = 150 °C, tp = 10 μs) | |
| Peak Forward Surge Current (Maximum @ TC = 25 °C, tp = 10 μs) | |
| Peak Repetitive Reverse Voltage | |
| Power Dissipation (Maximum @ TC = 150 °C) | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Reverse Current (Maximum @ VR=1200 V, TC=125 °C) | |
| Reverse Current (Maximum @ VR=1200 V, TC=175 °C) | |
| Reverse Current (Maximum @ VR=1200 V, TC=25 °C) | |
| Reverse Recovery Time (trr) | |
| SVHC Present | |
| Single Pulse Avalanche Energy | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Thermal Resistance - Junction to Case | |
| Total Capacitive Charge @ VR = 800 V | |
| Voltage | |
| capacitance (Typical @ VR = 400 V, f = 100 kHz) |
The FFSD08120A is a Silicon Carbide (SiC) Schottky diode manufactured by On Semiconductor. It is rated for a peak repetitive reverse voltage of 1200 V and can conduct a continuous forward current of 22.5 A when the case temperature is below 135°C, or 8 A when below 168°C. The diode offers zero reverse recovery time (trr = 0 ns), which eliminates switching losses associated with reverse recovery in silicon diodes. It also features a low forward voltage drop of typically 1.75 V at 8 A and 25°C, and a maximum junction temperature of 175°C.
The device is avalanche rated at 80 mJ and can handle non-repetitive peak surge currents up to 530 A (10 μs pulse at 25°C). Its thermal resistance from junction to case is 0.57 °C/W, allowing efficient heat dissipation. The diode is housed in a surface-mount DPAK package (TO-252AA, also known as TO-252-3 or SC-63), which is suitable for automated assembly.
Typical applications include power factor correction (PFC) circuits, switch-mode power supplies (SMPS), solar inverters, and UPS systems. The SiC technology provides high efficiency and reliability in high-voltage, high-frequency switching environments. The device is RoHS compliant, Pb-free, and halogen-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $7.09 | $7.09 |
| 10+ | $4.77 | $4.77 |
| 100+ | $3.46 | $3.46 |
| 500+ | $3.23 | $3.23 |
| 1,000+ | $3.02 | $3.02 |
| 2,500+ | $3.02 | $3.02 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1200 V.
22.5 A at case temperature below 135°C, or 8 A below 168°C.
Typically 1.75 V at 8 A and 25°C.
No, it has zero reverse recovery time (trr = 0 ns) due to SiC Schottky technology.
Surface-mount DPAK (TO-252AA, also known as TO-252-3 or SC-63).
175°C.
Non-repetitive peak surge current up to 530 A at 25°C for 10 μs pulse.