| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
132,500 pcs
|
132500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
81,020 pcs
|
81020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| AEC-Q101 Qualified | |
| Automotive Grade | |
| Avalanche Energy | |
| Capacitance @ Vr, F | |
| Continuous Forward Current (Maximum @ TC < 154 °C) | |
| Current | |
| Forward Voltage (Typical/Maximum @ IF=6 A, TJ=125 °C) | |
| Forward Voltage (Typical/Maximum @ IF=6 A, TJ=175 °C) | |
| Halogen Free | |
| Lead Style | |
| Maximum Junction Temperature | |
| Mounting Type | |
| Non-Repetitive Forward Surge Current | |
| Non-Repetitive Peak Forward Surge Current (Maximum @ TC = 150 °C, tP = 10 µs) | |
| Non-Repetitive Peak Forward Surge Current (Maximum @ TC = 25 °C, tP = 10 µs) | |
| Operating Temperature | |
| PPAP Capable | |
| Peak Repetitive Reverse Voltage | |
| Power Dissipation (Maximum @ TC = 150 °C) | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Reverse Current (Typical/Maximum @ VR=650 V, TJ=125 °C) | |
| Reverse Current (Typical/Maximum @ VR=650 V, TJ=175 °C) | |
| Reverse Current (Typical/Maximum @ VR=650 V, TJ=25 °C) | |
| Reverse Recovery Time (trr) | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance - Junction to Case | |
| Total Capacitive Charge | |
| Voltage | |
| capacitance (Typical @ VR = 200 V, f = 100 kHz) | |
| capacitance (Typical @ VR = 400 V, f = 100 kHz) |
The FFSD0665B-F085 is a Silicon Carbide (SiC) Schottky diode manufactured by On Semiconductor. It is rated for a peak repetitive reverse voltage of 650V and a continuous forward current of 6.0A at case temperature below 154°C (9.1A at TC<135°C). The diode is housed in a surface-mount DPAK (TO-252) package.
Key electrical characteristics include a typical forward voltage of 1.38V at 6A and 25°C, with a maximum of 1.7V. The device exhibits zero reverse recovery time (trr = 0 ns), enabling high-frequency operation with minimal switching losses. Reverse leakage current is typically 0.5 µA at 650V and 25°C, rising to 2.0 µA at 175°C. The diode offers a non-repetitive peak forward surge current capability of 493A at 25°C (10 µs pulse) and 28A for an 8.3 ms half-sine pulse.
The device can operate over a junction temperature range of -55°C to 175°C, with a maximum junction temperature of 175°C. Thermal resistance from junction to case is typically 2.0°C/W. Maximum power dissipation is 75W at 25°C case temperature. The diode is avalanche rated at 24.5 mJ and is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.
The FFSD0665B-F085 is Pb-free, Halogen-free/BFR-free, and RoHS compliant. It is designed for use in automotive HEV-EV onboard chargers and DC-DC converters.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.31 | $3.31 |
| 10+ | $2.10 | $2.10 |
| 2,500+ | $2.10 | $2.10 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The peak repetitive reverse voltage (VRRM) is 650V.
The continuous forward current is 6.0A at case temperature below 154°C, and 9.1A at case temperature below 135°C.
At 6A and 25°C, typical forward voltage is 1.38V, maximum 1.7V. At 125°C, typical 1.53V, maximum 2.0V. At 175°C, typical 1.67V, maximum 2.4V.
No, it has zero reverse recovery time (trr = 0 ns) due to Silicon Carbide Schottky technology.
It is available in surface-mount DPAK (TO-252) package.
Yes, it is AEC-Q101 qualified and PPAP capable.
-55°C to 175°C.