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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Capacitance @ Vr, F | |
| Current | |
| Ease of Paralleling | |
| Forward Current (Maximum @ TC < 154 °C) | |
| Forward Surge Current (Maximum @ Half-Sine Pulse, tP = 8.3 ms, TC = 25 °C) | |
| Forward Surge Current (Maximum @ tP=10 µs, TC=150 °C) | |
| Forward Surge Current (Maximum @ tP=10 µs, TC=25 °C) | |
| Forward Voltage (Typical/Maximum @ IF = 6.0 A, TJ = 125 °C) | |
| Forward Voltage (Typical/Maximum @ IF = 6.0 A, TJ = 175 °C) | |
| Halogen Free | |
| Industrial Grade | |
| Lead Style | |
| Max Junction Temperature | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Peak Repetitive Reverse Voltage | |
| Positive Temperature Coefficient | |
| Power Dissipation (Maximum @ TC = 150 °C) | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Reverse Current (Typical/Maximum @ VR=650 V, TJ=125 °C) | |
| Reverse Current (Typical/Maximum @ VR=650 V, TJ=175 °C) | |
| Reverse Current (Typical/Maximum @ VR=650 V, TJ=25 °C) | |
| Reverse Recovery Time (trr) | |
| SVHC Present | |
| Single Pulse Avalanche Energy | |
| Speed | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Thermal Resistance - Junction to Case | |
| Total Capacitive Charge | |
| Voltage | |
| capacitance (Typical @ VR = 200 V, f = 100 kHz) | |
| capacitance (Typical @ VR = 400 V, f = 100 kHz) |
The FFSD0665B is a 650V, 9.1A Silicon Carbide (SiC) Schottky diode from onsemi's EliteSiC family. It features zero reverse recovery current, temperature-independent switching, and excellent thermal performance. The device is avalanche rated at 24.5 mJ and offers high surge current capability up to 493 A (10 µs pulse).
Key electrical specifications include a forward voltage of 1.38 V typical at 6 A and 25°C, reverse leakage of 0.5 µA typical at 650 V and 25°C, and a total capacitive charge of 16 nC. The diode operates over a junction temperature range of -55°C to +175°C with a junction-to-case thermal resistance of 2.0 °C/W.
The FFSD0665B is housed in a TO-252-3 (DPAK) surface mount package with gull wing leads. It is Pb-free, halogen-free/BFR-free, and RoHS compliant. The positive temperature coefficient and ease of paralleling make it suitable for high-power switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.72 | $2.72 |
| 10+ | $1.66 | $1.66 |
| 2,500+ | $1.66 | $1.66 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The peak repetitive reverse voltage is 650 V.
The continuous forward current is 6.0 A at TC<154°C and 9.1 A at TC<135°C.
No, the reverse recovery time is 0 ns, meaning zero reverse recovery.
The device is in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package.
The operating junction temperature range is -55°C to +175°C.
Yes, it is RoHS3 compliant, Pb-free, and halogen-free/BFR-free.
The forward voltage is 1.38 V typical, 1.7 V maximum at IF=6.0 A, TJ=25°C.