| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
219,200 pcs
|
219200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Capacitance @ Vr, F | |
| Current | |
| Forward Current Max (Maximum @ TC < 139 °C) | |
| Forward Current Max (Maximum @ TC < 25 °C) | |
| Forward Voltage (Typical/Maximum @ IF = 30 A, TC = 125 °C) | |
| Forward Voltage (Typical/Maximum @ IF = 30 A, TC = 175 °C) | |
| Forward Voltage (Typical/Maximum @ IF = 30 A, TC = 25 °C) | |
| Halogen Free | |
| Junction to Case Thermal Resistance | |
| Max Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Operating Temperature Range | |
| Peak Repetitive Reverse Voltage | |
| Power Dissipation Max (Maximum @ TC = 150 °C) | |
| Power Dissipation Max (Maximum @ TC = 25 °C) | |
| Reverse Current (Typical/Maximum @ VR=650 V, TC=125 °C) | |
| Reverse Current (Typical/Maximum @ VR=650 V, TC=175 °C) | |
| Reverse Current (Typical/Maximum @ VR=650 V, TC=25 °C) | |
| Reverse Recovery Time (trr) | |
| Single Pulse Avalanche Energy | |
| Speed | |
| Supplier Device Package | |
| Surge Current Max (Maximum @ TC = 150 °C, 10 µs) | |
| Surge Current Max (Maximum @ TC = 25 °C, 10 µs) | |
| Surge Current Max (Maximum @ TC = 25 °C, Half-Sine Pulse tp = 8.3 ms) | |
| Tape & Reel | |
| Technology | |
| Total Capacitive Charge @ V = 400 V | |
| Voltage | |
| capacitance (Typical @ VR = 1 V, f = 100 kHz) | |
| capacitance (Typical @ VR = 200 V, f = 100 kHz) | |
| capacitance (Typical @ VR = 400 V, f = 100 kHz) |
The FFSB3065B-F085 is a 650V, 30A Silicon Carbide (SiC) Schottky diode from onsemi's EliteSiC family. It offers zero reverse recovery and no forward recovery, enabling high-frequency operation with minimal switching losses. The diode is rated for a maximum junction temperature of 175°C and has an avalanche energy rating of 144 mJ.
Key electrical specifications include a typical forward voltage of 1.38V at 30A and 25°C, and a maximum reverse current of 40 µA at 650V. The device can handle non-repetitive peak forward surge currents up to 1100A (10 µs pulse) and 120A (8.3 ms half-sine). Total capacitive charge is 74 nC at 400V.
The diode is housed in a D2PAK-2L (TO-263-2L) surface mount package with a maximum junction-to-case thermal resistance of 0.61°C/W. It is AEC-Q101 qualified and PPAP capable, suitable for automotive applications such as onboard chargers and DC-DC converters. The device is Pb-free, Halogen Free/BFR Free, and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $9.11 | $9.11 |
| 10+ | $6.22 | $6.22 |
| 100+ | $4.58 | $4.58 |
| 800+ | $4.58 | $4.58 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The peak repetitive reverse voltage is 650 V.
The continuous forward current is 30 A at case temperature below 139°C, and 73 A at case temperature below 25°C.
At 30 A and 25°C, the typical forward voltage is 1.38 V, with a maximum of 1.7 V.
No, the FFSB3065B-F085 is a SiC Schottky diode with zero reverse recovery time (0 ns).
It is available in a D2PAK-2L (TO-263-2L) surface mount package.
The maximum junction temperature is 175°C.
Yes, the datasheet states it is AEC-Q101 qualified and PPAP capable.