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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
800 pcs
|
800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Avalanche Energy (EAS) | |
| Capacitance @ Vr, F | |
| Current | |
| Forward Current (IF) (Maximum @ TC=140 °C) | |
| Forward Voltage (VF) (Typical/Maximum @ IF=10 A, TC=125 °C) | |
| Forward Voltage (VF) (Typical/Maximum @ IF=10 A, TC=175 °C) | |
| Junction Temperature (TJ) | |
| Mounting Type | |
| Non-Repetitive Forward Surge Current, Half-Sine Pulse, tp=8.3ms, TC=25°C | |
| Non-Repetitive Peak Forward Surge Current (IFSM) (Maximum @ TC=150 °C, 10 µs) | |
| Non-Repetitive Peak Forward Surge Current (IFSM) (Maximum @ TC=25 °C, 10 µs) | |
| Number of Leads | |
| Operating Temperature | |
| Power Dissipation (Ptot) (Maximum @ TC=150 °C) | |
| Power Dissipation (Ptot) (Maximum @ TC=25 °C) | |
| Reverse Leakage Current (IR) (Typical/Maximum @ VR=650 V, TC=125 °C) | |
| Reverse Leakage Current (IR) (Typical/Maximum @ VR=650 V, TC=175 °C) | |
| Reverse Leakage Current (IR) (Typical/Maximum @ VR=650 V, TC=25 °C) | |
| Reverse Recovery Time (trr) | |
| Reverse Voltage (Vrrm) | |
| SVHC Present | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance Junction-to-Case (RθJC) | |
| Total Capacitive Charge @ V=400V | |
| Voltage | |
| capacitance (Typical @ VR = 200 V, f = 100 kHz) | |
| capacitance (Typical @ VR = 400 V, f = 100 kHz) |
The FFSB2065BDN-F085 is a Silicon Carbide (SiC) Schottky diode from onsemi's EliteSiC family, rated for 650 V reverse voltage and 23.6 A continuous forward current at 25°C (10 A at 140°C). It offers zero reverse recovery time (0 ns), enabling high-frequency switching with reduced EMI. The diode is avalanche rated at 49 mJ and features surge current capability of 600 A (10 µs pulse) and 45 A (8.3 ms half-sine). Typical forward voltage is 1.38 V at 10 A (25°C) and 1.72 V at 175°C, with a positive temperature coefficient that simplifies paralleling. Reverse leakage is 0.5 µA typical at 650 V (25°C) and 2 µA at 175°C. Total capacitive charge is 25 nC at 400 V. With a maximum junction temperature of 175°C and case-to-junction thermal resistance of 2.0 °C/W, it can dissipate up to 75 W at 25°C case temperature. The device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive power applications. It comes in a surface-mount D2PAK-3 (TO-263-3) package with 3 leads.
| Qty | Low | High |
|---|---|---|
| 1+ | $8.01 | $8.01 |
| 10+ | $5.47 | $5.47 |
| 100+ | $4.00 | $4.00 |
| 500+ | $3.59 | $3.59 |
| 800+ | $3.59 | $3.59 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650 V.
23.6 A at TC=25°C, 10 A at TC=140°C.
Typical 1.38V, maximum 1.75V at 10A and 25°C.
No, it has zero reverse recovery time (0 ns) due to SiC Schottky technology.
Surface-mount D2PAK-3 (TO-263-3).
-55°C to 175°C.
49 mJ single pulse.